EP 1238417 A1 20020911 - SEMICONDUCTOR PROCESSING SILICA SOOT ABRASIVE SLURRY METHOD FOR INTEGRATED CIRCUIT MICROELECTRONICS
Title (en)
SEMICONDUCTOR PROCESSING SILICA SOOT ABRASIVE SLURRY METHOD FOR INTEGRATED CIRCUIT MICROELECTRONICS
Title (de)
SCHLEIFMITTEL AUF BASIS VON SILIKA FÜR DIE BEARBEITUNG VON HALBLEITERSCHEIBEN
Title (fr)
MICRO-ELECTRONIQUE A CIRCUIT INTEGRES : TECHNIQUE DE TRAITEMENT DE SEMI-CONDUCTEURS AU MOYEN D'UNE SUSPENSION ABRASIVE A BASE DE SUIE DE SILICE
Publication
Application
Priority
- US 0032077 W 20001122
- US 16712199 P 19991123
Abstract (en)
[origin: WO0139260A1] The invention utilizes colloidal silica soot (62) in a semiconductor process for chemical-mechanical planarizing a semiconductor integrated circuit workpiece (24) with a slurry (60). The particulate abrasive agent colloidal solid sphere fused silica soot (62) provides a beneficial CMP slurry/process for semiconductor device manufacturing compared to standard semiconductor CMP slurries with conventional colloidal sol-gel or fumed silica.
IPC 1-7
IPC 8 full level
B24B 37/04 (2012.01); B24B 57/02 (2006.01); C09G 1/02 (2006.01); C09K 3/14 (2006.01); H01L 21/304 (2006.01); H01L 21/321 (2006.01)
CPC (source: EP)
B24B 37/04 (2013.01); B24B 57/02 (2013.01); C09G 1/02 (2013.01); C09K 3/1463 (2013.01); H01L 21/3212 (2013.01)
Citation (search report)
See references of WO 0139260A1
Designated contracting state (EPC)
AT BE CH CY DE FR GB LI NL
DOCDB simple family (publication)
WO 0139260 A1 20010531; AU 1925801 A 20010604; EP 1238417 A1 20020911; JP 2003528447 A 20030924; TW 521337 B 20030221
DOCDB simple family (application)
US 0032077 W 20001122; AU 1925801 A 20001122; EP 00982198 A 20001122; JP 2001540830 A 20001122; TW 89127822 A 20001223