Global Patent Index - EP 1238423 A2

EP 1238423 A2 2002-09-11 - METHODS FOR SEPARATING MICROCIRCUIT DIES FROM WAFERS

Title (en)

METHODS FOR SEPARATING MICROCIRCUIT DIES FROM WAFERS

Title (de)

VERFAHREN ZUR ABTRENNUNG VON MIKROSCHALTUNGBAUSTEINEN AUS EINEM HALBLEITERWAFER

Title (fr)

PROCEDES POUR SEPARER LES PUCES A MICROCIRCUITS DE TRANCHES DE SEMICONDUCTEURS

Publication

EP 1238423 A2 (EN)

Application

EP 00992379 A

Priority

  • US 0042507 W
  • US 45646699 A

Abstract (en)

[origin: WO0143169A2] Methods are provided for separating microcircuit dies from a wafer, which includes microcircuit dies containing componentry on a circuit side thereof and streets separating the dies from each other. A first wafer mount film is affixed to the circuit side of the wafer, and the dies are detached along the streets with the circuit side of the wafer fixed to the first wafer mount film, thereby forming a divided wafer. A second wafer mount film is fixed to the back side of the divided wafer, and the first wafer mount film is removed from the divided wafer so that the dies remain fixed to the second wafer mount film with their circuit sides exposed. The second wafer mount film preferably has greater adhesion to the divided wafer than the first wafer mount film when the first wafer mount film is removed from the divided wafer. The first wafer mount film may comprise a protective film having holes aligned with fragile components on the dies and a cover film that covers the holes. The protective film may be an ultraviolet-curable film that exhibits reduced adhesion to the divided wafer after exposure to ultraviolet radiation.

IPC 1-7 (main, further and additional classification)

H01L 21/78; B81C 1/00

IPC 8 full level (invention and additional information)

H01L 21/301 (2006.01); H01L 21/02 (2006.01); H01L 21/68 (2006.01); H01L 21/78 (2006.01); H01L 23/544 (2006.01)

CPC (invention and additional information)

H01L 23/544 (2013.01); H01L 21/6836 (2013.01); H01L 21/78 (2013.01); H01L 2221/68327 (2013.01); H01L 2223/5442 (2013.01); H01L 2223/54453 (2013.01); H01L 2223/54466 (2013.01); H01L 2924/0002 (2013.01); H01L 2924/19041 (2013.01); H01L 2924/30105 (2013.01)

Combination set (CPC)

H01L 2924/0002 + H01L 2924/00

Citation (search report)

See references of WO 0143169A3

Designated contracting state (EPC)

DE FR GB

EPO simple patent family

WO 0143169 A2 20010614; WO 0143169 A3 20011213; EP 1238423 A2 20020911; JP 2003516630 A 20030513

INPADOC legal status


2004-05-19 [RBV] DESIGNATED CONTRACTING STATES (CORRECTION)

- Designated State(s): DE FR GB

2004-01-02 [18D] APPLICATION DEEMED TO BE WITHDRAWN

- Effective date: 20030603

2002-09-11 [17P] REQUEST FOR EXAMINATION FILED

- Effective date: 20020704

2002-09-11 [AK] DESIGNATED CONTRACTING STATES:

- Kind Code of Ref Document: A2

- Designated State(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR