Global Patent Index - EP 1239054 A1

EP 1239054 A1 2002-09-11 - Heat treatment of hypereutectic Al-Si alloys

Title (en)

Heat treatment of hypereutectic Al-Si alloys

Title (de)

Wärmebehandlung von übereutektischen Al-Si-Legierungen

Title (fr)

Traitement thermique d'alliages Al-Si hypereutectiques


EP 1239054 A1 (DE)


EP 02002600 A


DE 10110756 A

Abstract (en)

Heat treatment for casting of hypereutectic aluminum - silicon alloy applies a local heat at critical points (A-C) where there will be a high concentration of mechanical forces when in use. Heat is applied temporarily to heat metal to the melting point of primary silicon crystals and quenched. Molten zone is at a maximum depth of 1 mm, held at the melting temperature for a maximum of 3 secs. under a protective gas, using a cold welding process.

Abstract (de)

Ein Gussteil aus einer übereutektischen AI-Si-Legierung wird in einem lokalen Bereich hoher mechanischer Betriebsspannungskonzentration kurzzeitig bis in den schmelzflüssigen Bereich der primären Si-Kristalle erwärmt und dann abgeschreckt. <IMAGE>

IPC 1-7 (main, further and additional classification)

C22F 1/043; C22C 21/02

IPC 8 full level (invention and additional information)

C22F 1/043 (2006.01)

CPC (invention and additional information)

C22F 1/043 (2013.01)

Citation (search report)

  • [X] US 4711823 A 19871208 - SHIINA HARUO [JP]
  • [X] US 4483286 A 19841120 - HERRMANN RUEDIGER [DE], et al
  • [A] EP 0645465 A1 19950329 - KOBE STEEL LTD [JP]
  • [A] US 5749980 A 19980512 - IZUCHI SHUHEI [JP], et al
  • [A] US 5851320 A 19981222 - AURAN LARS [NO], et al
  • [A] US 5143557 A 19920901 - PIERANTONI MICHEL [CH], et al
  • [X] DATABASE CA [online] CHEMICAL ABSTRACTS SERVICE, COLUMBUS, OHIO, US; MOIR, S. A. ET AL: "The effect of temperature gradient and growth rate on spacing between primary silicon particles in rapidly solidified hypereutectic aluminum-silicon alloys", XP002198446, retrieved from STN Database accession no. 115:164286 & J. CRYST. GROWTH (1991), 113(1-2), 77-82
  • [A] PATENT ABSTRACTS OF JAPAN vol. 015, no. 332 (C - 0861) 23 August 1991 (1991-08-23)
  • [A] PATENT ABSTRACTS OF JAPAN vol. 008, no. 187 (C - 240) 28 August 1984 (1984-08-28)

Designated contracting state (EPC)


DOCDB simple family

EP 1239054 A1 20020911; DE 10110756 A1 20020919