Global Patent Index - EP 1240551 A2

EP 1240551 A2 2002-09-18 - LITHOGRAPHY DEVICE WHICH USES A SOURCE OF RADIATION IN THE EXTREME ULTRAVIOLET RANGE AND MULTI-LAYERED MIRRORS WITH A BROAD SPECTRAL BAND IN THIS RANGE

Title (en)

LITHOGRAPHY DEVICE WHICH USES A SOURCE OF RADIATION IN THE EXTREME ULTRAVIOLET RANGE AND MULTI-LAYERED MIRRORS WITH A BROAD SPECTRAL BAND IN THIS RANGE

Title (de)

LITHOGRAPHISCHES VERFAHREN MIT EUV-STRAHLENQUELLE UND BREITBAND-MEHRSCHICHTSPIEGELN

Title (fr)

DISPOSITIF DE LITHOGRAPHIE UTILISANT UNE SOURCE DE RAYONNEMENT DANS LE DOMAINE EXTREME ULTRAVIOLET ET DES MIROIRS MULTICOUCHES A LARGE BANDE SPECTRALE DANS CE DOMAINE

Publication

EP 1240551 A2 (FR)

Application

EP 00988892 A

Priority

  • FR 0003429 W
  • FR 9915470 A

Abstract (en)

[origin: WO0142855A2] The invention relates to a lithography device which uses a source of radiation in the extreme ultraviolet range, and to multi-layered mirrors with a broad spectral band in this range. Each mirror (24, 26, 29) comprises a stack of layers consisting of a first material and layers consisting of a second material alternating with said first layers. The atomic number of the first material is greater than of the second material. The thickness of pairs of adjacent layers is a monotonic function of their depth in the stack. The source (22) comprises at least one target (28) which emits the radiation by interacting with a laser beam that is focused on one of its surfaces. The device uses part (36) of the radiation emitted from the other surface. The invention can be used for producing integrated circuits with a high degree of integration.

IPC 1-7 (main, further and additional classification)

G03F 1/14; G02B 5/08; G03F 7/20; G21K 1/06; H05G 2/00

IPC 8 full level (invention and additional information)

G02B 5/26 (2006.01); G02B 5/28 (2006.01); G03F 1/24 (2012.01); G03F 7/20 (2006.01); G21K 5/04 (2006.01); H01L 21/027 (2006.01); H05G 2/00 (2006.01)

CPC (invention and additional information)

H05G 2/001 (2013.01); B82Y 10/00 (2013.01); B82Y 40/00 (2013.01); G03F 1/24 (2013.01); G03F 7/70033 (2013.01); G03F 7/702 (2013.01); G03F 7/70233 (2013.01); G03F 7/70575 (2013.01)

Citation (search report)

See references of WO 0142855A3

Designated contracting state (EPC)

AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR

EPO simple patent family

WO 0142855 A2 20010614; WO 0142855 A3 20011227; AU 2524201 A 20010618; CN 1222829 C 20051012; CN 1433531 A 20030730; EP 1240551 A2 20020918; FR 2802311 A1 20010615; FR 2802311 B1 20020118; JP 2003516643 A 20030513; KR 100695480 B1 20070314; KR 20030009329 A 20030129; RU 2002118110 A 20040320; RU 2249840 C2 20050410; TW 539911 B 20030701; US 2002171817 A1 20021121; US 6724465 B2 20040420

INPADOC legal status


2009-12-23 [18D] APPLICATION DEEMED TO BE WITHDRAWN

- Effective date: 20090701

2006-11-02 [RAP1] TRANSFER OF RIGHTS OF AN APPLICATION

- Owner name: COMMISSARIAT A L'ENERGIE ATOMIQUE

2002-09-18 [17P] REQUEST FOR EXAMINATION FILED

- Effective date: 20020517

2002-09-18 [AK] DESIGNATED CONTRACTING STATES:

- Kind Code of Ref Document: A2

- Designated State(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR

2002-09-18 [AX] REQUEST FOR EXTENSION OF THE EUROPEAN PATENT TO:

- Free text: AL;LT;LV;MK;RO;SI