EP 1243025 A2 20020925 - SEMICONDUCTOR PACKAGING
Title (en)
SEMICONDUCTOR PACKAGING
Title (de)
HALBLEITERGEHÄUSUNG
Title (fr)
ENCAPSULATION DE SEMI-CONDUCTEURS
Publication
Application
Priority
- US 0027206 W 20001002
- US 15673999 P 19990930
Abstract (en)
[origin: WO0124259A2] An electronic component and a method for making an electronic component are disclosed. The electronic component has a silicon package. The silicon package has a recess formed thereon in which a conductive region is placed. A bare die electronic device is disposed in the recess. The device has a top, a bottom, sides and a plurality of terminals, including a non-top terminal. The non-top terminal is electrically coupled to the conductive region. The electronic component is constructed by first creating a recess in a silicon wafer to a depth substantially equal to the first dimension of the bare die electronic device. A conductive material is applied to the recess. The electronic device is inserted into the recess so that the bottom terminal is coupled to the conductive material. A dielectric or other planarizing material is applied into the recess. Top and bottom contacts are then applied to form the electronic component so that it may be used as a ball grid array package. The top contact is electrically coupled to the top terminal of the electronic device and the bottom contact is coupled electrically to the conductive material.
IPC 1-7
IPC 8 full level
H01L 21/60 (2006.01); H01L 23/13 (2006.01); H01L 23/14 (2006.01); H01L 23/31 (2006.01); H01L 23/498 (2006.01); H01L 23/538 (2006.01)
CPC (source: EP)
H01L 23/13 (2013.01); H01L 23/147 (2013.01); H01L 23/3121 (2013.01); H01L 23/3128 (2013.01); H01L 23/49816 (2013.01); H01L 23/5389 (2013.01); H01L 24/32 (2013.01); H01L 24/83 (2013.01); H01L 24/97 (2013.01); H01L 2224/24227 (2013.01); H01L 2224/2919 (2013.01); H01L 2224/8319 (2013.01); H01L 2224/83801 (2013.01); H01L 2224/97 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/01047 (2013.01); H01L 2924/014 (2013.01); H01L 2924/0665 (2013.01); H01L 2924/09701 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/12036 (2013.01); H01L 2924/14 (2013.01); H01L 2924/15153 (2013.01); H01L 2924/15157 (2013.01); H01L 2924/15165 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/1532 (2013.01); H01L 2924/19041 (2013.01); H01L 2924/19042 (2013.01); H01L 2924/19043 (2013.01); H01L 2924/3025 (2013.01)
Citation (search report)
See references of WO 0124259A2
Citation (examination)
- JP S61214444 A 19860924 - FUJITSU LTD
- EP 0288052 A2 19881026 - SUMITOMO ELECTRIC INDUSTRIES [JP]
- JP S5944849 A 19840313 - HITACHI LTD, et al
Designated contracting state (EPC)
AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE
DOCDB simple family (publication)
WO 0124259 A2 20010405; WO 0124259 A3 20011129; AU 7748800 A 20010430; EP 1243025 A2 20020925
DOCDB simple family (application)
US 0027206 W 20001002; AU 7748800 A 20001002; EP 00967264 A 20001002