EP 1246252 A2 20021002 - Method of manufacturing an electrode for silicon carbide semiconductor
Title (en)
Method of manufacturing an electrode for silicon carbide semiconductor
Title (de)
Verfahren zur Herstellung einer Elektrode für Siliziumkarbidhalbleiter
Title (fr)
Méthode de fabrication d'une électrode pour carbure de silicium semiconducteur
Publication
Application
Priority
JP 2001090042 A 20010327
Abstract (en)
An ohmic electrode for an SiC semiconductor includes a p-type Si layer formed on the surface of a p-type SiC semiconductor, and a metal silicide layer formed on the surface of the Si layer, the metal silicide layer being formed from a metal silicide such as PtSi. The p-type Si layer is preferably formed from p-type Si having a carrier concentration equal to or higher than that of the aforementioned p-type SiC. Preferably, the ohmic electrode is formed as follows: deposition of Si is performed; deposition of a metal silicide is performed by means of laser ablation; laser irradiation is performed to thereby improve ohmic properties and enhance adhesion between the resultant deposition layer and the p-type SiC semiconductor; and then further deposition of the metal silicide is performed by means of laser ablation.
IPC 1-7
IPC 8 full level
H01L 21/28 (2006.01); H01L 21/04 (2006.01); H01L 29/45 (2006.01); H01L 29/861 (2006.01); H01L 29/24 (2006.01)
CPC (source: EP US)
H01L 21/0485 (2013.01 - EP US); H01L 29/45 (2013.01 - EP US); H01L 29/1608 (2013.01 - EP US)
Designated contracting state (EPC)
DE FR GB IT SE
DOCDB simple family (publication)
EP 1246252 A2 20021002; EP 1246252 A3 20070103; EP 1246252 B1 20080611; DE 60227022 D1 20080724; JP 2002289555 A 20021004; JP 4545975 B2 20100915; US 2002145145 A1 20021010; US 2004099866 A1 20040527; US 6770508 B2 20040803
DOCDB simple family (application)
EP 02252154 A 20020326; DE 60227022 T 20020326; JP 2001090042 A 20010327; US 10526902 A 20020326; US 71869103 A 20031124