EP 1246710 A4 20070704 - ATMOSPHERIC PROCESS AND SYSTEM FOR CONTROLLED AND RAPID REMOVAL OF POLYMERS FROM HIGH DEPTH TO WIDTH ASPECT RATIO HOLES
Title (en)
ATMOSPHERIC PROCESS AND SYSTEM FOR CONTROLLED AND RAPID REMOVAL OF POLYMERS FROM HIGH DEPTH TO WIDTH ASPECT RATIO HOLES
Title (de)
VERFAHREN UND VORRICHTUNG UNTER ATMOSPHÄRISCHEN BEDINGUNGEN ZUM SCHNELLEN UND KOTROLIERTEN ENTFERNEN VON POLYMEREN AUS DURCH GROSSE TIEFEN-WEITEN-VERHÄLTNISSZAHLEN GEKENNZEICHNETEN LÖCHERN
Title (fr)
PROCEDE ET SYSTEME EN CONDITIONS ATMOSPHERIQUES POUR LE RETRAIT MAITRISE ET RAPIDE DE POLYMERES HORS DE TROUS A FACTEUR DE FORME PROFONDEUR/LARGEUR ELEVE
Publication
Application
Priority
- US 0027113 W 20000928
- US 15640799 P 19990928
Abstract (en)
[origin: WO0123130A1] A hot arc-type plasma generating system is described to etch a polymer (44) on a substrate (10) used in the manufacture of semiconductor devices. The etching process is particularly useful to remove a polymer from high aspect ratio holes (40), that can include trenches, greater than about 10 to 1 and even greater than 50 to 1.
IPC 1-7
IPC 8 full level
B23K 10/00 (2006.01); H01L 21/302 (2006.01); H01L 21/311 (2006.01)
CPC (source: EP)
B23K 10/003 (2013.01); H01L 21/31138 (2013.01); B23K 2101/40 (2018.07)
Citation (search report)
- [XDY] WO 9745856 A1 19971204 - IPEC PRECISION INC [US], et al
- [A] US 5173442 A 19921222 - CAREY DAVID H [US]
- [YD] WO 9746056 A1 19971204 - IPEC PRECISION INC [US], et al
- [X] US 4891303 A 19900102 - GARZA CESAR M [US], et al
- [X] JP S6159834 A 19860327 - HITACHI LTD, et al
- See references of WO 0123130A1
Designated contracting state (EPC)
AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE
DOCDB simple family (publication)
WO 0123130 A1 20010405; AU 7746000 A 20010430; EP 1246710 A1 20021009; EP 1246710 A4 20070704; JP 2003510824 A 20030318; JP 2007235138 A 20070913
DOCDB simple family (application)
US 0027113 W 20000928; AU 7746000 A 20000928; EP 00967233 A 20000928; JP 2001526324 A 20000928; JP 2007045525 A 20070226