EP 1249521 B8 20060503 - SiC SINGLE CRYSTAL AND METHOD FOR GROWING THE SAME
Title (en)
SiC SINGLE CRYSTAL AND METHOD FOR GROWING THE SAME
Title (de)
SIC-EINKRISTALL UND HERSTELLUNGSVERFAHREN DAFÜR
Title (fr)
MONOCRISTAL EN SIC ET SON PROCEDE DE CROISSANCE
Publication
Application
Priority
- JP 0006057 W 20000906
- JP 36459399 A 19991222
Abstract (en)
[origin: EP1249521A1] The growth of a silicon carbide single crystal comprises growing a SiC single crystal on a seed crystal comprising a SiC single crystal at an angle alpha (20 [deg] less than alpha less than 60 [deg]) to the {0001} surface and at an angle beta of = 15[deg] of the vector obtained by projecting the normal vector onto the {0001} surface and the (11-20) direction. An independent claim is also included for a silicon carbide single crystal grown by this method.
IPC 8 full level
C30B 23/00 (2006.01); C30B 23/02 (2006.01); C30B 25/00 (2006.01); C30B 25/02 (2006.01); C30B 25/20 (2006.01); C30B 29/36 (2006.01); H01L 21/205 (2006.01)
CPC (source: EP)
C30B 23/00 (2013.01); C30B 23/005 (2013.01); C30B 25/00 (2013.01); C30B 29/36 (2013.01)
Designated contracting state (EPC)
DE FR GB SE
DOCDB simple family (publication)
EP 1249521 A1 20021016; EP 1249521 A4 20030205; EP 1249521 B1 20060111; EP 1249521 B8 20060503; DE 60025502 D1 20060406; DE 60025502 T2 20060831; JP 2001181095 A 20010703; JP 4253974 B2 20090415; TW 581831 B 20040401; WO 0146500 A1 20010628
DOCDB simple family (application)
EP 00956968 A 20000906; DE 60025502 T 20000906; JP 0006057 W 20000906; JP 36459399 A 19991222; TW 89118615 A 20000911