EP 1252358 A4 20080213 - SYSTEM AND METHOD FOR DEPOSITING INORGANIC/ORGANIC DIELECTRIC FILMS
Title (en)
SYSTEM AND METHOD FOR DEPOSITING INORGANIC/ORGANIC DIELECTRIC FILMS
Title (de)
SYSTEM UND VERFAHREN ZUM ABSCHEIDEN VON INORGANISCHEN/ORGANISCHEN DIELEKTRISCHEN FILMEN
Title (fr)
SYSTEME ET PROCEDE POUR DEPOSER DES PELLICULES DIELECTRIQUES INORGANIQUES/ORGANIQUES
Publication
Application
Priority
- US 0031694 W 20001117
- US 16666299 P 19991119
Abstract (en)
[origin: WO0136703A1] A system and method for depositing a dielectric film on the surface of a substrate is provided having a processing chamber with a substrate support for supporting a substrate and one or more gas inlets for conveying gases to the processing chamber. A first plasma source defining a first plasma zone within the chamber is provided, and a second plasma source defining a second plasma zone within said chamber is provided. Gases are separately ionized at different ionization levels in the first and second plasma zones, and these separately ionized gases react to form a dielectric film on the surface of the substrate.
IPC 8 full level
C23C 16/00 (2006.01); C23C 16/509 (2006.01); C23C 16/40 (2006.01); C23C 16/448 (2006.01); C23C 16/505 (2006.01); C23F 1/02 (2006.01); H01J 37/32 (2006.01); H01L 21/31 (2006.01); H01L 21/312 (2006.01); H01L 21/316 (2006.01); H01L 21/469 (2006.01); H01L 21/314 (2006.01)
CPC (source: EP KR)
C23C 16/00 (2013.01 - KR); C23C 16/401 (2013.01 - EP); C23C 16/402 (2013.01 - EP); C23C 16/448 (2013.01 - EP); C23C 16/505 (2013.01 - EP); H01J 37/321 (2013.01 - EP); H01J 37/32596 (2013.01 - EP); H01L 21/02126 (2013.01 - EP); H01L 21/02216 (2013.01 - EP); H01L 21/02274 (2013.01 - EP)
Citation (search report)
- [XY] EP 0947603 A2 19991006 - NISSIN ELECTRIC CO LTD [JP]
- [YD] WO 9955526 A1 19991104 - SILICON VALLEY GROUP THERMAL [US]
- [X] SONG Y ET AL: "OPTICAL AND STRUCTURAL PROPERTIES OF LOW-TEMPERATURE PECVD ETMS SIOX THIN FILMS", THIN SOLID FILMS, ELSEVIER-SEQUOIA S.A. LAUSANNE, CH, vol. 334, no. 1/2, 4 December 1998 (1998-12-04), pages 92 - 97, XP000669262, ISSN: 0040-6090
- See references of WO 0136703A1
Designated contracting state (EPC)
DE FR GB IT NL
DOCDB simple family (publication)
WO 0136703 A1 20010525; AU 1776401 A 20010530; CN 1460130 A 20031203; EP 1252358 A1 20021030; EP 1252358 A4 20080213; JP 2003530481 A 20031014; KR 20020070436 A 20020909; TW I232243 B 20050511
DOCDB simple family (application)
US 0031694 W 20001117; AU 1776401 A 20001117; CN 00816928 A 20001117; EP 00980511 A 20001117; JP 2001538578 A 20001117; KR 20027006378 A 20020517; TW 89124488 A 20001118