Title (en)

SILICON NANOPARTICLE FIELD EFFECT TRANSISTOR AND TRANSISTOR MEMORY DEVICE

Title (de)

SILIZIUM-NANOTEILCHEN-FELDEFFEKTTRANSISTOR UND TRANSISTORSPEICHERELEMENT

Title (fr)

TRANSISTOR A EFFET DE CHAMP COMPRENANT DES NANOPARTICULES DE SILICIUM, ET DISPOSITIF DE MEMOIRE A TRANSISTOR

Publication

EP 1252658 A4 20080213 (EN)

Application

EP 01912688 A 20010202

Priority

• US 0103479 W 20010202
• US 49650600 A 20000202

Abstract (en)

[origin: WO0157927A1] A silicon nanoparticle (18) transistor (30, 32, 34) and transistor memory device. The transistor of the invention has silicon nanoparticles (18), dimensioned on the order of 1nm, in a gate area (34) of a field effect transistor (30, 32, 34). The resulting transistor is a transistor in which single electron flow controls operation of the transistor. Room temperature operation is possible with the novel transistor structure by radiation assistance, with radiation being directed toward the silicon nanoparticles to create necessary holes in the quantum structure for the flow of an electron. The transistor of the invention also forms the basis for a memory device. The device is a flash memory device which will store electrical charge instead of magnetic effects.

IPC 8 full level

H01L 29/06 (2006.01); H01L 29/76 (2006.01); H01L 21/8247 (2006.01); H01L 27/10 (2006.01); H01L 27/115 (2006.01); H01L 27/15 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/788 (2006.01); H01L 29/792 (2006.01)

CPC (source: EP)

B82Y 10/00 (2013.01); H01L 29/42332 (2013.01); H01L 29/7883 (2013.01); H01L 29/7888 (2013.01)

Citation (search report)

• [Y] US 5430309 A 19950704 - UGAJIN RYUICHI [JP]
• [X] FR 2762931 A1 19981106 - COMMISSARIAT ENERGIE ATOMIQUE [FR]
• [XY] PALUN L ET AL: "THE MULTI-TUNNEL JUNCTION SINGLE ELECTRON MEMORY: ARCHITECTURE AND SIMULATION", EXTENDED ABSTRACTS OF THE INTERNATIONAL CONFERENCE ON SOLID STATE DEVICES AND MATERIALS, JAPAN SOCIETY OF APPLIED PHYSICS. TOKYO, JA, 1999, pages 88 - 89, XP000935007
• [X] DUTTA A ET AL: "SINGLE ELECTRON MEMORY DEVICES BASED ON SILICON NANOCRYSTALS FABRICATED BY VERY HIGH FREQUENCY PLASMA DEPOSITION", EXTENDED ABSTRACTS OF THE INTERNATIONAL CONFERENCE ON SOLID STATE DEVICES AND MATERIALS, JAPAN SOCIETY OF APPLIED PHYSICS. TOKYO, JA, 1999, pages 76 - 77, XP000935002
• [X] TAKAHASHI N ET AL: "A DIRECTIONAL CURRENT SWITCH USING SILICON SINGLE ELECTRON TRANSISTORS CONTROLLED BY CHARGE INJECTION INTO SILICON NANO-CRYSTAL FLOATING DOTS", INTERNATIONAL ELECTRON DEVICES MEETING 1999. IEDM. TECHNICAL DIGEST. WASHINGTON, DC, DEC. 5 - 8, 1999, NEW YORK, NY : IEEE, US, 1 August 1999 (1999-08-01), pages 371 - 374, XP000933214, ISBN: 0-7803-5411-7
• [X] ONO Y ET AL: "SINGLE-ELECTRON TRANSISTOR AND CURRENT-SWITCHING DEVICE FABRICATED BY VERTICAL PATTERN-DEPENDENT OXIDATION (V-PADOX)", EXTENDED ABSTRACTS OF THE INTERNATIONAL CONFERENCE ON SOLID STATE DEVICES AND MATERIALS, JAPAN SOCIETY OF APPLIED PHYSICS. TOKYO, JA, 1999, pages 230 - 231, XP000935067
• [A] KANUO YANO ET AL: "ROOM-TEMPERATURE SINGLE-ELECTRON MEMORY", IEEE TRANSACTIONS ON ELECTRON DEVICES, IEEE SERVICE CENTER, PISACATAWAY, NJ, US, vol. 41, no. 9, 1 September 1994 (1994-09-01), pages 1628 - 1638, XP000466806, ISSN: 0018-9383
• See references of WO 0157927A1

Designated contracting state (EPC)

AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR

DOCDB simple family (publication)

WO 0157927 A1 20010809; WO 0157927 A9 20030109; AU 4144101 A 20010814; CA 2393962 A1 20010809; CA 2393962 C 20070703; EP 1252658 A1 20021030; EP 1252658 A4 20080213; JP 2003522419 A 20030722

DOCDB simple family (application)

US 0103479 W 20010202; AU 4144101 A 20010202; CA 2393962 A 20010202; EP 01912688 A 20010202; JP 2001557090 A 20010202