EP 1254460 A2 20021106 - 1T FLASH MEMORY RECOVERY SCHEME FOR OVER-ERASURE
Title (en)
1T FLASH MEMORY RECOVERY SCHEME FOR OVER-ERASURE
Title (de)
UBERLÖSCHKORREKTURVERFAHREN FUR 1T FLASHSPEICHER
Title (fr)
SCHEMA DE RECUPERATION D'UNE MEMOIRE FLASH A UN TRANSISTOR, A PARTIR D'UN SUREFFACEMENT
Publication
Application
Priority
- EP 0101034 W 20010131
- US 17923400 P 20000131
- US 77222001 A 20010129
Abstract (en)
[origin: WO0156035A2] A method is provided which uses a uniform electric potential across tunnel oxide, based on a uniform field to allow memory cell recovery from over-erasure.
IPC 1-7
IPC 8 full level
G11C 11/56 (2006.01); G11C 16/34 (2006.01); G11C 16/04 (2006.01)
CPC (source: EP US)
G11C 11/5621 (2013.01 - EP US); G11C 11/5628 (2013.01 - EP US); G11C 11/5635 (2013.01 - EP US); G11C 16/3404 (2013.01 - EP US); G11C 16/3409 (2013.01 - EP US); G11C 5/145 (2013.01 - EP US); G11C 16/0416 (2013.01 - EP US); G11C 16/0433 (2013.01 - EP US); G11C 2211/565 (2013.01 - EP US)
Citation (search report)
See references of WO 0156035A2
Designated contracting state (EPC)
DE FR
DOCDB simple family (publication)
WO 0156035 A2 20010802; WO 0156035 A3 20020425; DE 60127532 D1 20070510; EP 1252632 A2 20021030; EP 1254460 A2 20021106; EP 1254460 B1 20070328; TW 520493 B 20030211; US 2003092236 A1 20030515; WO 0157876 A2 20010809; WO 0157876 A3 20020307
DOCDB simple family (application)
EP 0101034 W 20010131; DE 60127532 T 20010131; EP 0101033 W 20010131; EP 01911562 A 20010131; EP 01923557 A 20010131; TW 90111638 A 20010515; US 77222001 A 20010129