Global Patent Index - EP 1254479 A1

EP 1254479 A1 2002-11-06 - WAFER BONDING TECHNIQUES TO MINIMIZE BUILT-IN STRESS OF SILICON MICROSTRUCTURES AND MICRO-MIRRORS

Title (en)

WAFER BONDING TECHNIQUES TO MINIMIZE BUILT-IN STRESS OF SILICON MICROSTRUCTURES AND MICRO-MIRRORS

Title (de)

TECHNIK ZUM ZUSAMMENFÜGEN VON SCHEIBEN UNTER MINIMIERUNG DES EINGEBAUTEN STRESSES VON SILIZIUM MIKROSTRUKTUREN UND MIKROSPIEGEL

Title (fr)

LIAGE DESTINE A MINIMISER LA CONTRAINTE INTEGREE DES MICROSTRUCTURES ET DES MICROMIROIRS EN SILICIUM

Publication

EP 1254479 A1 (EN)

Application

EP 01903124 A

Priority

  • US 0101758 W
  • US 17632500 P
  • US 71591600 A

Abstract (en)

[origin: WO0154176A1] A bonded wafer fabrication mechanism for a micro-mirror structure provides for oxidizing a device wafer instead of a handle wafer or splitting thermal oxidation processing between the device wafer and the handle wafer prior to etching. The flatness of mirrors in micro-mirror structures fabricated according to such a mechanism is substantially improved.

IPC 1-7 (main, further and additional classification)

H01L 21/20; H01L 21/762

IPC 8 full level (invention and additional information)

H01L 21/20 (2006.01); H01L 21/762 (2006.01)

CPC (invention and additional information)

H01L 21/2007 (2013.01); H01L 21/76251 (2013.01)

Citation (search report)

See references of WO 0154176A1

Designated contracting state (EPC)

AT BE CH DE FR GB LI

EPO simple patent family

WO 0154176 A1 20010726; WO 0154176 A9 20030116; AU 3098201 A 20010731; CA 2397760 A1 20010726; EP 1254479 A1 20021106

INPADOC legal status


2006-02-01 [18D] DEEMED TO BE WITHDRAWN

- Effective date: 20050802

2004-05-26 [RBV] DESIGNATED CONTRACTING STATES (CORRECTION):

- Designated State(s): AT BE CH DE FR GB LI

2002-11-06 [17P] REQUEST FOR EXAMINATION FILED

- Effective date: 20020719

2002-11-06 [AK] DESIGNATED CONTRACTING STATES:

- Kind Code of Ref Document: A1

- Designated State(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR

2002-11-06 [AX] REQUEST FOR EXTENSION OF THE EUROPEAN PATENT TO

- Free text: AL;LT;LV;MK;RO;SI