EP 1256117 A1 20021113 - METHOD TO PROVIDE A REDUCED CONSTANT E-FIELD DURING ERASE OF EEPROMS FOR RELIABILITY IMPROVEMENT
Title (en)
METHOD TO PROVIDE A REDUCED CONSTANT E-FIELD DURING ERASE OF EEPROMS FOR RELIABILITY IMPROVEMENT
Title (de)
VERFAHREN ZUR HERVORBRINGUNG EINES KONSTANTEN FELDES MIT GERINGER ELEKTIZITÄT WÄHREND DES LÖSCHENS EINES EEPROMS ZUR ZUVERLÄSSIGKEITSVERBESSERUNG
Title (fr)
PROCEDE DESTINE A FOURNIR UN CHAMP ELECTRIQUE CONSTANT REDUIT DURANT L'EFFACEMENT DE MEMOIRES DE TYPE EEPROM AFIN D'AMELIORER LEUR FIABILITE
Publication
Application
Priority
- US 0033044 W 20001205
- US 17232799 P 19991217
- US 49035100 A 20000124
Abstract (en)
[origin: WO0145113A1] A method to reduce the peak electric field during erase of a memory device composed of multiple memory cells. The electric field Efield of the memory cell during erase is determined by the equation Efield SIMILAR <i>a</i>g(Vgate - Vth) + Vtuv + (<i>a</i>s -1)Vsource and varying gate voltages Vgate are applied to the gate of the cell being erased so that the Vgate - Vth is constant during the erase procedure.
IPC 1-7
IPC 8 full level
G11C 16/02 (2006.01); G11C 16/14 (2006.01); H01L 21/8247 (2006.01); H01L 27/115 (2006.01); H01L 29/788 (2006.01); H01L 29/792 (2006.01)
CPC (source: EP KR)
G11C 16/14 (2013.01 - EP KR)
Citation (search report)
See references of WO 0145113A1
Designated contracting state (EPC)
AT BE CH CY DE FR GB LI NL
DOCDB simple family (publication)
WO 0145113 A1 20010621; CN 1411602 A 20030416; EP 1256117 A1 20021113; JP 2003517176 A 20030520; JP 4641697 B2 20110302; KR 100655944 B1 20061211; KR 20030011066 A 20030206
DOCDB simple family (application)
US 0033044 W 20001205; CN 00817240 A 20001205; EP 00983940 A 20001205; JP 2001545318 A 20001205; KR 20027007781 A 20001205