Global Patent Index - EP 1256126 A1

EP 1256126 A1 2002-11-13 - ETCHING SOLUTION AND METHOD

Title (en)

ETCHING SOLUTION AND METHOD

Title (de)

ÄTZLÖSUNG UND VERFAHREN

Title (fr)

SOLUTION DECAPANTE ET PROCEDE

Publication

EP 1256126 A1 (EN)

Application

EP 01905084 A

Priority

  • US 0102569 W
  • US 49786400 A

Abstract (en)

[origin: WO0157921A1] An etching solution of Hydrogen Fluoride (HF), carboxylic acid and water having a high etch selectivity for silicon oxide relative to metal, polysilicon and nitride. The etching solution is created by injecting anhydrous HF into a carboxylic acid having a precisely controlled minimal amount of water. The etching solution is useful in the fabrication of Micro Electro-Mechanical System (MEMS) devices, as well as the fabrication of MEMS devices in combination with integrated electronics on the same chip.

IPC 1-7 (main, further and additional classification)

H01L 21/311; C09K 13/08

IPC 8 full level (invention and additional information)

B81C 1/00 (2006.01); C09K 13/08 (2006.01); H01L 21/308 (2006.01); H01L 21/311 (2006.01)

CPC (invention and additional information)

H01L 21/31111 (2013.01); C09K 13/08 (2013.01)

Citation (search report)

See references of WO 0157921A1

Designated contracting state (EPC)

DE FR IT

EPO simple patent family

WO 0157921 A1 20010809; AU 3300201 A 20010814; EP 1256126 A1 20021113; JP 2003536242 A 20031202

INPADOC legal status


2006-11-08 [18D] DEEMED TO BE WITHDRAWN

- Effective date: 20060516

2004-12-08 [RAP1] TRANSFER OF RIGHTS OF AN EP PUBLISHED APPLICATION

- Owner name: FREESCALE SEMICONDUCTOR, INC.

2004-05-12 [RBV] DESIGNATED CONTRACTING STATES (CORRECTION):

- Designated State(s): DE FR IT

2002-11-13 [17P] REQUEST FOR EXAMINATION FILED

- Effective date: 20020904

2002-11-13 [AK] DESIGNATED CONTRACTING STATES:

- Kind Code of Ref Document: A1

- Designated State(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR

2002-11-13 [AX] REQUEST FOR EXTENSION OF THE EUROPEAN PATENT TO

- Free text: AL;LT;LV;MK;RO;SI