EP 1256126 A1 20021113 - ETCHING SOLUTION AND METHOD
Title (en)
ETCHING SOLUTION AND METHOD
Title (de)
ÄTZLÖSUNG UND VERFAHREN
Title (fr)
SOLUTION DECAPANTE ET PROCEDE
Publication
Application
Priority
- US 0102569 W 20010126
- US 49786400 A 20000204
Abstract (en)
[origin: WO0157921A1] An etching solution of Hydrogen Fluoride (HF), carboxylic acid and water having a high etch selectivity for silicon oxide relative to metal, polysilicon and nitride. The etching solution is created by injecting anhydrous HF into a carboxylic acid having a precisely controlled minimal amount of water. The etching solution is useful in the fabrication of Micro Electro-Mechanical System (MEMS) devices, as well as the fabrication of MEMS devices in combination with integrated electronics on the same chip.
IPC 1-7
IPC 8 full level
B81C 1/00 (2006.01); C09K 13/08 (2006.01); H01L 21/308 (2006.01); H01L 21/311 (2006.01)
CPC (source: EP KR)
C09K 13/08 (2013.01 - EP KR); H01L 21/31111 (2013.01 - EP KR)
Citation (search report)
See references of WO 0157921A1
Designated contracting state (EPC)
DE FR IT
DOCDB simple family (publication)
WO 0157921 A1 20010809; AU 3300201 A 20010814; EP 1256126 A1 20021113; JP 2003536242 A 20031202; KR 20020075907 A 20021007
DOCDB simple family (application)
US 0102569 W 20010126; AU 3300201 A 20010126; EP 01905084 A 20010126; JP 2001557084 A 20010126; KR 20027010076 A 20020805