Global Patent Index - EP 1258032 A1

EP 1258032 A1 2002-11-20 - METHOD FOR PRODUCING DEFINED POLYCRYSTALLINE SILICON AREAS IN AN AMORPHOUS SILICON LAYER

Title (en)

METHOD FOR PRODUCING DEFINED POLYCRYSTALLINE SILICON AREAS IN AN AMORPHOUS SILICON LAYER

Title (de)

VERFAHREN ZUR HERSTELLUNG DEFINIERTER POLYKRISTALLINER SILIZIUM-BEREICHE IN EINER AMORPHEN SILIZIUMSCHICHT

Title (fr)

PROCEDE DE FABRICATION DE ZONES DE SILICIUM POLYCRISTALLIN DEFINIES DANS UNE COUCHE DE SILICIUM AMORPHE

Publication

EP 1258032 A1 (DE)

Application

EP 01916884 A

Priority

  • DE 0100314 W
  • DE 10005564 A

Abstract (en)

[origin: WO0159818A1] The invention relates to a method for producing defined polycrystalline silicon areas, especially for creating conductive areas, comprising the following steps: (a) a substrate (10) is provided with an insulating layer (12) and a layer made of doped amorphous silicon (14); b) said structure is exposed to electromagnetic radiation (20) with the aid of a laser source (18) in order to produce the electrically conductive areas (26); c) a shadow mask (22) is placed in between the substrate provided with the doped amorphous silicon layer (14) and the laser source (18) in order to define the contours of the electrically conductive areas (26).

IPC 1-7 (main, further and additional classification)

H01L 21/20; G01L 9/00; H01L 21/02; H01L 29/84

IPC 8 full level (invention and additional information)

G01L 9/00 (2006.01); H01L 21/20 (2006.01); H01L 29/84 (2006.01)

CPC (invention and additional information)

G01L 9/0042 (2013.01); H01L 21/2026 (2013.01)

Citation (search report)

See references of WO 0159818A1

Designated contracting state (EPC)

DE FR GB GR IT

EPO simple patent family

WO 0159818 A1 20010816; DE 10005564 A1 20010816; EP 1258032 A1 20021120; JP 2003523079 A 20030729; US 2004026358 A1 20040212; US 7012026 B2 20060314

INPADOC legal status


2013-03-13 [18D] DEEMED TO BE WITHDRAWN

- Effective date: 20120918

2007-12-26 [17Q] FIRST EXAMINATION REPORT

- Effective date: 20071123

2004-05-12 [RBV] DESIGNATED CONTRACTING STATES (CORRECTION):

- Designated State(s): DE FR GB GR IT

2002-11-20 [17P] REQUEST FOR EXAMINATION FILED

- Effective date: 20020909

2002-11-20 [AK] DESIGNATED CONTRACTING STATES:

- Kind Code of Ref Document: A1

- Designated State(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR

2002-11-20 [AX] REQUEST FOR EXTENSION OF THE EUROPEAN PATENT TO

- Free text: AL;LT;LV;MK;RO;SI