EP 1258042 A1 20021120 - MOS TRANSISTOR FOR HIGH DENSITY INTEGRATION CIRCUITS
Title (en)
MOS TRANSISTOR FOR HIGH DENSITY INTEGRATION CIRCUITS
Title (de)
MOS-TRANSISTOR FÜR HOCHINTERGIERTE SCHALTKREISE
Title (fr)
TRANSISTOR MOS POUR CIRCUITS A HAUTE DENSITE D'INTEGRATION
Publication
Application
Priority
- FR 0100532 W 20010223
- FR 0002237 A 20000223
Abstract (en)
[origin: WO0163677A1] The invention concerns a MOS transistor produced in a silicon film of a SOI substrate (10), said film (13) being lightly doped and having a thickness less than 30 nm, the source (14) and drain (15) contacts being of the Schottky type with the lowest possible Schottky barrier height for the majority carriers, the operating conditions of the transistor being of the accumulative type.
IPC 1-7
IPC 8 full level
H01L 29/78 (2006.01); H01L 29/786 (2006.01)
CPC (source: EP US)
H01L 29/7839 (2013.01 - EP US); H01L 29/78654 (2013.01 - EP US)
Citation (search report)
See references of WO 0163677A1
Citation (examination)
- JPN J APPL ET AL: "Analysis of Short-Channel Schottky Source/Drain Metal-Oxide-Semiconductor Field-Effect Transistor on Silicon-on-Insulator Substrate and Demonstration of Sub-50-nm n-type Devices with Metal Gate Home Search Collections Journals About Contact us My IOPscience Analysis of Short-Channel Schottky Source/", PHYS. PUBLICATION BOARD JAPANESE JOURNAL OF APPLIED PHYSICS, 1 November 1999 (1999-11-01), pages 6226 - 6231, XP055264286, Retrieved from the Internet <URL:http://iopscience.iop.org/article/10.1143/JJAP.38.6226/pdf>
- SZE S M ED - SZE S M: "Physics of semiconductor devices", 1 January 1981, 19810101, PAGE(S) 32, ISBN: 978-0-471-05661-4, XP002592003
Designated contracting state (EPC)
AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR
DOCDB simple family (publication)
WO 0163677 A1 20010830; AU 3748301 A 20010903; CA 2399115 A1 20020830; CA 2399115 C 20091013; EP 1258042 A1 20021120; FR 2805395 A1 20010824; FR 2805395 B1 20020510; JP 2003524899 A 20030819; JP 5090601 B2 20121205; US 2003094629 A1 20030522; US 6774451 B2 20040810
DOCDB simple family (application)
FR 0100532 W 20010223; AU 3748301 A 20010223; CA 2399115 A 20010223; EP 01909882 A 20010223; FR 0002237 A 20000223; JP 2001562764 A 20010223; US 20453003 A 20030106