Global Patent Index - EP 1258042 A1

EP 1258042 A1 2002-11-20 - MOS TRANSISTOR FOR HIGH DENSITY INTEGRATION CIRCUITS

Title (en)

MOS TRANSISTOR FOR HIGH DENSITY INTEGRATION CIRCUITS

Title (de)

MOS-TRANSISTOR FÜR HOCHINTERGIERTE SCHALTKREISE

Title (fr)

TRANSISTOR MOS POUR CIRCUITS A HAUTE DENSITE D'INTEGRATION

Publication

EP 1258042 A1 (FR)

Application

EP 01909882 A

Priority

  • FR 0100532 W
  • FR 0002237 A

Abstract (en)

[origin: WO0163677A1] The invention concerns a MOS transistor produced in a silicon film of a SOI substrate (10), said film (13) being lightly doped and having a thickness less than 30 nm, the source (14) and drain (15) contacts being of the Schottky type with the lowest possible Schottky barrier height for the majority carriers, the operating conditions of the transistor being of the accumulative type.

IPC 1-7 (main, further and additional classification)

H01L 29/78

IPC 8 full level (invention and additional information)

H01L 29/786 (2006.01); H01L 29/78 (2006.01)

CPC (invention and additional information)

H01L 29/78654 (2013.01); H01L 29/7839 (2013.01)

Citation (search report)

See references of WO 0163677A1

Designated contracting state (EPC)

AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR

EPO simple patent family

WO 0163677 A1 20010830; AU 3748301 A 20010903; CA 2399115 A1 20020830; CA 2399115 C 20091013; EP 1258042 A1 20021120; FR 2805395 A1 20010824; FR 2805395 B1 20020510; JP 2003524899 A 20030819; JP 5090601 B2 20121205; US 2003094629 A1 20030522; US 6774451 B2 20040810

INPADOC legal status


2017-04-19 [18D] DEEMED TO BE WITHDRAWN

- Effective date: 20161115

2016-05-04 [RIC1] CLASSIFICATION (CORRECTION)

- IPC: H01L 29/78 20060101ALI20160331BHEP

2016-05-04 [RIC1] CLASSIFICATION (CORRECTION)

- IPC: H01L 29/786 20060101AFI20160331BHEP

2007-03-28 [17Q] FIRST EXAMINATION REPORT

- Effective date: 20070221

2002-11-20 [17P] REQUEST FOR EXAMINATION FILED

- Effective date: 20020726

2002-11-20 [AK] DESIGNATED CONTRACTING STATES:

- Kind Code of Ref Document: A1

- Designated State(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR

2002-11-20 [AX] REQUEST FOR EXTENSION OF THE EUROPEAN PATENT TO

- Free text: AL;LT;LV;MK;RO;SI