EP 1259664 A2 20021127 - CONTROLLED NECK GROWTH PROCESS FOR SINGLE CRYSTAL SILICON
Title (en)
CONTROLLED NECK GROWTH PROCESS FOR SINGLE CRYSTAL SILICON
Title (de)
KONTROLLIERTES VERFAHREN ZUR ZÜCHTUNG EINES HALSES EINES SILIZIUMEINKRISTALLES
Title (fr)
PROCEDE DE CROISSANCE DE RETRECISSEMENT REGULE POUR SILICIUM MONOCRISTALLIN
Publication
Application
Priority
- JP 2000044369 A 20000222
- JP 2000136811 A 20000510
- US 0105379 W 20010220
Abstract (en)
[origin: WO0163022A2] A process for preparing a single crystal silicon in accordance with the Czochralski method, is provided. More specifically, by quickly redueing the pull rate at least once during the growth of a neck portion of the single crystal silicon ingot, in order to change the melt/solid interface shape from a concave to a convex shape, the present process enables zero dislocation growth to be achieved in a large diameter neck within a comparably short neck length, such that large diameter ingots of substantial weight can be produced safely and at a high throughput.
IPC 1-7
IPC 8 full level
C30B 15/00 (2006.01); C30B 15/22 (2006.01); C30B 29/06 (2006.01)
CPC (source: EP KR)
C30B 15/20 (2013.01 - KR); C30B 15/22 (2013.01 - EP); C30B 29/06 (2013.01 - EP)
Citation (search report)
See references of WO 0163022A2
Designated contracting state (EPC)
DE FR GB IT
DOCDB simple family (publication)
WO 0163022 A2 20010830; WO 0163022 A3 20020725; EP 1259664 A2 20021127; JP 2001316198 A 20011113; JP 4521933 B2 20100811; KR 20020081343 A 20021026; TW 500841 B 20020901
DOCDB simple family (application)
US 0105379 W 20010220; EP 01914414 A 20010220; JP 2000136811 A 20000510; KR 20027010918 A 20020821; TW 90104084 A 20010418