EP 1259983 A1 20021127 - ELECTRICAL CONNECTION BETWEEN TWO SURFACES OF A SUBSTRATE AND METHOD FOR PRODUCING SAME
Title (en)
ELECTRICAL CONNECTION BETWEEN TWO SURFACES OF A SUBSTRATE AND METHOD FOR PRODUCING SAME
Title (de)
ELEKTRISCHE VERBINDUNG ZWISCHEN ZWEI SUBSTRATOBERFLÄCHEN UND VERFAHREN ZU DEREN REALISIERUNG
Title (fr)
CONNEXION ELECTRIQUE ENTRE DEUX FACES D'UN SUBSTRAT ET PROCEDE DE REALISATION
Publication
Application
Priority
- FR 0100565 W 20010227
- FR 0002446 A 20000228
Abstract (en)
[origin: FR2805709A1] The electrical connection between two sides of a conductor or semiconductor substrate (20) comprises at least one electrically insulating trench (36,44) extending in full thickness of substrate, filled to at least part of its height, and completely surrounding a part (46) of substrate, and two conductors, one in the form of a contact pad (42) on lower side of substrate in part (46). The electrical connection is established by the part (46) of substrate and the two conductors (38,42). The first trench is etched in the substrate starting on upper side and is filled with an electrically insulating material. The filled part of trench is the first trench whose walls are covered with an insulating layer, and the trench is filled with another material (36) whose coefficient of thermal expansion is close to that of the substrate. The trench comprises a non-filled part formed by the second trench (44) etched in the substrate starting on lower side (40). The second trench is also filled. The method for producing the electrical connection comprises operations which include the making and filling of trench, the deposition of first conductor, and the formation of second conductor. The substrate is thinned to a desired thickness before the formation of second trench, and the second conductor is formed on the thinned side.
IPC 1-7
IPC 8 full level
H01L 21/3205 (2006.01); H01L 21/768 (2006.01); H01L 23/52 (2006.01)
CPC (source: EP US)
H01L 21/76898 (2013.01 - EP US); H01L 2924/0002 (2013.01 - EP US)
Citation (search report)
See references of WO 0165598A1
Citation (examination)
- US 5770884 A 19980623 - POGGE H BERNHARD [US], et al
- JP H10303364 A 19981113 - TOSHIBA CORP & US 6087719 A 20000711 - TSUNASHIMA YOSHITAKA [JP]
- EP 0907206 A1 19990407 - MATSUSHITA ELECTRONICS CORP [JP]
- PARK T ET AL: "Electrical Characterization of Copper Chemical Mechanical Polishing", 1999 PROCEEDINGS - FOURTH INTERNATIONAL CHEMICAL-MECHANICAL PLANARIZATION FOR ULSI MULTILEVEL INTERCONNECTION CONFERENCE (CMP-MIC): FEBRUARY 11-12, 1999, SANTA CLARA MARRIOTT HOTEL, SANTA CLARA, CA, USA, 1999, Tampa, pages 184 - 191, XP055443390, Retrieved from the Internet <URL:https://pdfs.semanticscholar.org/a33b/8f4db96cdc99f0f3fbfadaecf0fbd41df057.pdf> [retrieved on 20180123]
Designated contracting state (EPC)
AT BE CH DE GB IT LI
DOCDB simple family (publication)
FR 2805709 A1 20010831; FR 2805709 B1 20020517; EP 1259983 A1 20021127; JP 2003526207 A 20030902; JP 2012231173 A 20121122; JP 5329733 B2 20131030; US 2003022475 A1 20030130; US 6815827 B2 20041109; WO 0165598 A1 20010907
DOCDB simple family (application)
FR 0002446 A 20000228; EP 01909909 A 20010227; FR 0100565 W 20010227; JP 2001564390 A 20010227; JP 2012163153 A 20120723; US 20485802 A 20020826