EP 1264335 A1 20021211 - METHOD OF FORMING ULTRASHALLOW JUNCTIONS BY LASER ANNEALING AND RAPID THERMAL ANNEALING
Title (en)
METHOD OF FORMING ULTRASHALLOW JUNCTIONS BY LASER ANNEALING AND RAPID THERMAL ANNEALING
Title (de)
VERFAHREN ZUR HERSTELLUNG DER FLACHEN ÜBERGÄNGE DURCH LASER-ANNEALING UND KURZZEITTEMPERN
Title (fr)
PROCEDE DE FORMATION DE JONCTIONS DE TRES FAIBLE PROFONDEUR PAR RECUIT LASER ET RECUIT THERMIQUE RAPIDE
Publication
Application
Priority
- US 0108241 W 20010315
- US 19023300 P 20000317
- US 63841000 A 20000811
Abstract (en)
[origin: WO0171787A1] Methods are provided for thermal processing of a semiconductor wafer that contains a dopant material. The wafer is irradiated with laser energy sufficient to activate the dopant material without melting the wafer. In addition, rapid thermal annealing of the wafer is performed at relatively low temperature to repair crystalline damage. The dopant activation is achieved with no measurable diffusion. The low temperature rapid thermal anneal repairs crystalline damage, so that devices have good mobilities and low leakage currents.
IPC 1-7
IPC 8 full level
H01L 21/26 (2006.01); H01L 21/265 (2006.01); H01L 21/268 (2006.01); H01L 21/324 (2006.01)
CPC (source: EP KR US)
H01L 21/26513 (2013.01 - EP US); H01L 21/268 (2013.01 - EP); H01L 21/324 (2013.01 - EP KR)
Citation (search report)
See references of WO 0171787A1
Designated contracting state (EPC)
AT BE CH CY DE FR GB IT LI
DOCDB simple family (publication)
WO 0171787 A1 20010927; CN 1222016 C 20051005; CN 1419708 A 20030521; EP 1264335 A1 20021211; JP 2003528462 A 20030924; JP 4942128 B2 20120530; KR 100839259 B1 20080617; KR 20030066318 A 20030809; TW I271791 B 20070121
DOCDB simple family (application)
US 0108241 W 20010315; CN 01806216 A 20010315; EP 01916675 A 20010315; JP 2001569868 A 20010315; KR 20027012179 A 20010315; TW 90106353 A 20010319