EP 1269539 A1 20030102 - SEMICONDUCTOR COMPONENT WITH CONTACTS PROVIDED ON THE LOWER SIDE THEREOF, AND METHOD FOR PRODUCING THE SAME
Title (en)
SEMICONDUCTOR COMPONENT WITH CONTACTS PROVIDED ON THE LOWER SIDE THEREOF, AND METHOD FOR PRODUCING THE SAME
Title (de)
HALBLEITERBAUELEMENT MIT AN DER UNTERSEITE BEFINDLICHEN KONTAKTEN UND VERFAHREN ZUR HERSTELLUNG
Title (fr)
COMPOSANT A SEMICONDUCTEURS PRESENTANT DES CONTACTS SITUES AU NIVEAU DE SA FACE INFERIEURE, ET SON PROCEDE DE PRODUCTION
Publication
Application
Priority
- DE 0100386 W 20010131
- DE 10004410 A 20000202
Abstract (en)
[origin: WO0157924A1] The invention relates to a semiconductor component that comprises a housing with a first main surface and a second main surface opposite the first surface, said housing substantially enclosing at least one semiconductor chip. Said semiconductor chip has a first metallization on a first main side. A second main side of the semiconductor chip reaches the second main surface of the semiconductor component. The first metallization of the semiconductor chip is linked via conductors with contacts that are also enclosed by the housing and that reach the second main side. The semiconductor chip is further provided on the second main side with a second metallization that transmits signals.
IPC 1-7
IPC 8 full level
H01L 23/12 (2006.01); H01L 21/56 (2006.01); H01L 21/68 (2006.01); H01L 21/98 (2006.01); H01L 23/31 (2006.01); H01L 23/482 (2006.01); H01L 25/04 (2006.01); H01L 25/18 (2006.01)
CPC (source: EP KR US)
H01L 21/568 (2013.01 - EP KR US); H01L 23/3107 (2013.01 - EP KR US); H01L 23/482 (2013.01 - EP KR US); H01L 25/0655 (2013.01 - EP KR US); H01L 25/50 (2013.01 - EP KR US); H01L 24/48 (2013.01 - EP US); H01L 24/49 (2013.01 - EP US); H01L 2224/05599 (2013.01 - EP US); H01L 2224/48091 (2013.01 - EP US); H01L 2224/48137 (2013.01 - EP US); H01L 2224/48247 (2013.01 - EP US); H01L 2224/48464 (2013.01 - EP US); H01L 2224/48465 (2013.01 - EP US); H01L 2224/48475 (2013.01 - EP US); H01L 2224/4848 (2013.01 - EP US); H01L 2224/49171 (2013.01 - EP US); H01L 2224/73265 (2013.01 - EP US); H01L 2224/85001 (2013.01 - EP US); H01L 2224/85051 (2013.01 - EP US); H01L 2224/854 (2013.01 - EP US); H01L 2924/00014 (2013.01 - EP US); H01L 2924/01029 (2013.01 - EP US); H01L 2924/01046 (2013.01 - EP US); H01L 2924/01057 (2013.01 - EP US); H01L 2924/01068 (2013.01 - EP US); H01L 2924/01078 (2013.01 - EP US); H01L 2924/01079 (2013.01 - EP US); H01L 2924/12042 (2013.01 - EP US); H01L 2924/181 (2013.01 - EP US)
C-Set (source: EP US)
- H01L 2224/48475 + H01L 2924/01079
- H01L 2924/00014 + H01L 2224/45015 + H01L 2924/207
- H01L 2924/181 + H01L 2924/00
- H01L 2224/48091 + H01L 2924/00014
- H01L 2224/49171 + H01L 2224/48465 + H01L 2924/00
- H01L 2224/48465 + H01L 2224/48091 + H01L 2924/00
- H01L 2224/48465 + H01L 2224/48247 + H01L 2924/00
- H01L 2924/12042 + H01L 2924/00
- H01L 2224/05599 + H01L 2924/00014
- H01L 2224/854 + H01L 2924/00014
- H01L 2924/00014 + H01L 2224/45099
Citation (search report)
See references of WO 0157924A1
Designated contracting state (EPC)
AT BE CH CY DE FR GB IT LI
DOCDB simple family (publication)
WO 0157924 A1 20010809; DE 10004410 A1 20010816; EP 1269539 A1 20030102; JP 2003522416 A 20030722; JP 2005252278 A 20050915; KR 20020074228 A 20020928; US 2003015774 A1 20030123; US 2006014326 A1 20060119
DOCDB simple family (application)
DE 0100386 W 20010131; DE 10004410 A 20000202; EP 01911410 A 20010131; JP 2001557087 A 20010131; JP 2005095685 A 20050329; KR 20027009937 A 20020801; US 21097702 A 20020802; US 22034105 A 20050906