EP 1274529 A1 20030115 - DEVICE FOR MONITORING AND CALIBRATING OXIDE CHARGE MEASUREMENT EQUIPMENT AND METHOD THEREFOR
Title (en)
DEVICE FOR MONITORING AND CALIBRATING OXIDE CHARGE MEASUREMENT EQUIPMENT AND METHOD THEREFOR
Title (de)
APPARAT ZUR KONTROLLE UND KALIBRIERUNG VON OXIDLADUNGSMESSGERÄTEN UND ZUGEHÖRIGE METHODE
Title (fr)
DISPOSITIF DESTINE A CONTROLER ET A CALIBRER UN EQUIPEMENT DE MESURE DE CHARGE D'OXYDE ET PROCEDE CORRESPONDANT
Publication
Application
Priority
US 0007711 W 20000320
Abstract (en)
[origin: WO0170438A1] A stabilized wafer for monitoring and calibrating oxide charge test equipment. The stabilized wafer comprises; a silicon wafer, a SiO2 layer of at least 100 angstroms upon the silicon wafer, and a phosphosilicate glass layer containing phosphorus formed in the SiO2 layer for providing the stabilized wafer by stabilizing an SiO2 interface and containing oxygen ions. The stabilized wafer is used for monitoring and calibrating oxide charge test equipment.
IPC 1-7
IPC 8 full level
H01L 21/66 (2006.01); H01L 23/544 (2006.01); G11B 5/39 (2006.01); H01L 21/316 (2006.01)
CPC (source: EP KR US)
B82Y 10/00 (2013.01 - EP); B82Y 25/00 (2013.01 - EP US); H01L 22/00 (2013.01 - KR US); H01L 22/34 (2013.01 - EP); G11B 5/3903 (2013.01 - EP); G11B 2005/3996 (2013.01 - EP); H01L 21/02129 (2013.01 - EP KR US); H01L 21/02164 (2013.01 - EP KR US); H01L 21/02337 (2013.01 - US); H01L 2924/0002 (2013.01 - EP)
Citation (search report)
See references of WO 0170438A1
Designated contracting state (EPC)
AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE
DOCDB simple family (publication)
WO 0170438 A1 20010927; AU 3912600 A 20011003; EP 1274529 A1 20030115; JP 2004507878 A 20040311; KR 20020089407 A 20021129
DOCDB simple family (application)
US 0007711 W 20000320; AU 3912600 A 20000320; EP 00918293 A 20000320; JP 2001568682 A 20000320; KR 20027012504 A 20020923