EP 1275133 A1 20030115 - DEVICE AND METHOD FOR THE ETCHING OF A SUBSTRATE BY MEANS OF AN INDUCTIVELY COUPLED PLASMA
Title (en)
DEVICE AND METHOD FOR THE ETCHING OF A SUBSTRATE BY MEANS OF AN INDUCTIVELY COUPLED PLASMA
Title (de)
VORRICHTUNG UND VERFAHREN ZUM ÄTZEN EINES SUBSTRATES MITTELS EINES INDUKTIV GEKOPPELTEN PLASMAS
Title (fr)
DISPOSITIF ET PROCEDE POUR LA GRAVURE D'UN SUBSTRAT AU MOYEN D'UN PLASMA A COUPLAGE INDUCTIF
Publication
Application
Priority
- DE 0101031 W 20010317
- DE 10051831 A 20001019
Abstract (en)
[origin: US2002046987A1] A device and a method for etching a substrate, in particular a silicon body, by using an inductively coupled plasma. A high-frequency electromagnetic alternating field is generated using an ICP source, and an inductively coupled plasma composed of reactive particles is generated by the action of a high-frequency electromagnetic alternating field on a reactive gas in a reactor. In addition, a static or time-variable magnetic field is generated between the substrate and the ICP source, for which purpose at least two magnetic field coils arranged one above the other are provided. The direction of the resulting magnetic field is also approximately parallel to the direction defined by the tie line connecting the substrate and the inductively coupled plasma. Finally, a first component magnetic field is generated with a first magnetic field coil, and a second component magnetic field which is equally strong at an equivalent site is generated with a second magnetic field coil, the two component magnetic fields being oriented in opposite directions.
IPC 1-7
IPC 8 full level
H05H 1/10 (2006.01); B01J 19/08 (2006.01); H01J 37/32 (2006.01); H01L 21/3065 (2006.01); H05H 1/46 (2006.01)
CPC (source: EP KR US)
H01J 37/321 (2013.01 - EP US); H01J 37/3266 (2013.01 - EP US); H01L 21/3065 (2013.01 - EP KR US)
Citation (search report)
See references of WO 0233728A1
Citation (examination)
- WO 9919527 A2 19990422 - TOKYO ELECTRON LTD [JP], et al
- EP 0849766 A2 19980624 - APPLIED MATERIALS INC [US]
Designated contracting state (EPC)
CH DE FR GB LI NL
DOCDB simple family (publication)
US 2002046987 A1 20020425; US 6709546 B2 20040323; EP 1275133 A1 20030115; GB 0120574 D0 20011017; GB 2368714 A 20020508; GB 2368714 B 20030730; JP 2004512680 A 20040422; JP 4847671 B2 20111228; KR 100797385 B1 20080124; KR 20020062746 A 20020729; US 2004149388 A1 20040805; US 7094706 B2 20060822; WO 0233728 A1 20020425
DOCDB simple family (application)
US 87122401 A 20010531; DE 0101031 W 20010317; EP 01931374 A 20010317; GB 0120574 A 20010823; JP 2002537030 A 20010317; KR 20027007172 A 20020605; US 76301004 A 20040121