EP 1279053 A2 20030129 - PHOTONIC BANDGAP MATERIALS BASED ON SILICON
Title (en)
PHOTONIC BANDGAP MATERIALS BASED ON SILICON
Title (de)
PHOTONIC BANDGAP MATERIAL AUF SILIZIUM BASIS
Title (fr)
MATI RES DE BANDE INTERDITE PHOTONIQUE BASE DE SILICIUM
Publication
Application
Priority
- CA 0100049 W 20010124
- US 17877300 P 20000128
Abstract (en)
[origin: WO0155484A2] Method of synthesis of photonic band gap (PBG) materials. The synthesis and characterization of high quality, very large scale, face centered cubic photonic band gap (PBG) materials consisting of pure silicon, exhibiting a complete three-dimensional PBG centered on a wavelength of 1.5 mu m. This is obtained by chemical vapor deposition and anchoring of disilane into a self-assembling silica opal template, wetting of a thick silicon layer on the interior surfaces of the template, and subsequent removal of the template. This achievement realizes a long standing goal in photonic materials and opens a new door for complete control of radiative emission from atoms and molecules, light localization and the integration of micron scale photonic devices into a three-dimensional all-optical micro-chip.
IPC 1-7
IPC 8 full level
G02B 6/122 (2006.01)
CPC (source: EP)
B82Y 20/00 (2013.01); G02B 6/1225 (2013.01)
Citation (search report)
See references of WO 0155484A2
Designated contracting state (EPC)
AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR
DOCDB simple family (publication)
WO 0155484 A2 20010802; WO 0155484 A3 20020418; AU 2821701 A 20010807; CA 2398632 A1 20010802; CA 2398632 C 20090428; EP 1279053 A2 20030129
DOCDB simple family (application)
CA 0100049 W 20010124; AU 2821701 A 20010124; CA 2398632 A 20010124; EP 01946910 A 20010124