EP 1285393 A1 20030226 - S-PARAMETER MICROSCOPY FOR SEMICONDUCTOR DEVICES
Title (en)
S-PARAMETER MICROSCOPY FOR SEMICONDUCTOR DEVICES
Title (de)
S-PARAMETER-MIKROSKOPIE FÜR HALBLEITERBAUELEMENTE
Title (fr)
MICROSCOPIE A PARAMETRES S POUR DES DISPOSITIFS A SEMI-CONDUCTEURS
Publication
Application
Priority
- US 0113337 W 20010425
- US 20030700 P 20000428
- US 84056301 A 20010423
Abstract (en)
[origin: WO0184464A1] A method of using bias-dependent S-parameter measurements as a form of microscopy (figure 5). The microscopy can be used to resolve the details of the internal charge and electric field structure of a semiconductor device. Like other forms of microscopy, the S-parameter microscopy focuses on pseudo "images" and provides a contrast in the "images". Essentially, the images are gathered in raw form as S-parameter measurements and extracted as small signal models. The models are used to form charge control maps (32), through a selective method analogous to focusing. Focusing is provided for by an algorithm for the unique determination of small signal parameters with contrasts provided by utilizing measured bias dependent activity to discriminate boundaries between the electrical charge and fields.
IPC 1-7
IPC 8 full level
G01R 27/28 (2006.01); H01L 29/00 (2006.01); H01L 29/80 (2006.01); G01R 31/28 (2006.01); G01R 31/316 (2006.01)
CPC (source: EP KR)
G01R 27/28 (2013.01 - EP KR); G01R 31/28 (2013.01 - KR); G01R 31/316 (2013.01 - KR); G01R 31/28 (2013.01 - EP); G01R 31/316 (2013.01 - EP)
Citation (search report)
See references of WO 0184464A1
Designated contracting state (EPC)
AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR
DOCDB simple family (publication)
WO 0184464 A1 20011108; AU 5914801 A 20011112; EP 1285393 A1 20030226; JP 2003532307 A 20031028; KR 20020093962 A 20021216
DOCDB simple family (application)
US 0113337 W 20010425; AU 5914801 A 20010425; EP 01932637 A 20010425; JP 2001581204 A 20010425; KR 20027014424 A 20021025