EP 1291904 A3 20091007 - GaN substrate formed over GaN layer having discretely formed minute holes produced by selective growth
Title (en)
GaN substrate formed over GaN layer having discretely formed minute holes produced by selective growth
Title (de)
GaN-Substrat, das auf einer feinen diskreten Löcher aufweisenden GaN-Schicht gebildet wurde, die durch selektives Wachstum hergestellt worden ist
Title (fr)
Substrat de GaN formé sur une couche de GaN présentant des trous minces discrets réalisés par croissance sélective
Publication
Application
Priority
- JP 2001272895 A 20010910
- JP 2002134089 A 20020509
Abstract (en)
[origin: EP1291904A2] In a process for producing a substrate for use in a semiconductor element: a growth suppression mask which is constituted by a plurality of mask elements being discretely arranged and each having a width of 2.5 micrometers or smaller is formed on a surface of a base substrate; a first GaN layer having a plurality of holes is formed on the surface of the base substrate by growing GaN from areas of the surface of the base substrate which are not covered by the plurality of first mask elements; and a second GaN layer is formed over the first GaN layer by crystal growth.
IPC 8 full level
H01L 21/20 (2006.01); C30B 25/02 (2006.01); C30B 25/18 (2006.01); C30B 29/38 (2006.01)
CPC (source: EP US)
C30B 25/02 (2013.01 - EP US); C30B 25/18 (2013.01 - EP US); C30B 29/406 (2013.01 - EP US); H01L 21/0237 (2013.01 - EP US); H01L 21/02458 (2013.01 - EP US); H01L 21/0254 (2013.01 - EP US); H01L 21/02576 (2013.01 - EP US); H01L 21/02579 (2013.01 - EP US); H01L 21/0262 (2013.01 - EP US); H01L 21/02639 (2013.01 - EP US); H01L 21/02647 (2013.01 - EP US); H01L 33/007 (2013.01 - EP US)
Citation (search report)
- [X] JP 2000277435 A 20001006 - MITSUBISHI CABLE IND LTD
- [A] WO 9920816 A1 19990429 - CENTRE NAT RECH SCIENT [FR], et al
- [X] WO 0057460 A1 20000928 - MITSUBISHI CABLE IND LTD [JP], et al
- [X] US 6015979 A 20000118 - SUGIURA LISA [JP], et al
- [A] EP 0942459 A1 19990915 - NICHIA KAGAKU KOGYO KK [JP]
- [A] WO 0055893 A1 20000921 - MITSUBISHI CABLE IND LTD [JP], et al & EP 1178523 A1 20020206 - MITSUBISHI CABLE IND LTD [JP] & EP 1184897 A1 20020306 - MITSUBISHI CABLE IND LTD [JP]
- [A] VENNÉGUÈS P ET AL: "Reduction mechanisms for defect densities in GaN using one- or two-step epitaxial lateral overgrowth methods", JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 87, no. 9, 1 May 2000 (2000-05-01), pages 4175 - 4181, XP012049874, ISSN: 0021-8979
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR IE IT LI LU MC NL PT SE SK TR
Designated extension state (EPC)
AL LT LV MK RO SI
DOCDB simple family (publication)
EP 1291904 A2 20030312; EP 1291904 A3 20091007; US 2003047746 A1 20030313
DOCDB simple family (application)
EP 02019861 A 20020909; US 23694302 A 20020909