EP 1292529 A1 20030319 - VERTICAL TRANSISTOR COMPRISING A MOBILE GATE AND A METHOD FOR THE PRODUCTION THEREOF
Title (en)
VERTICAL TRANSISTOR COMPRISING A MOBILE GATE AND A METHOD FOR THE PRODUCTION THEREOF
Title (de)
VERTIKAL-TRANSISTOR MIT BEWEGLICHEM GATE UND VERFAHREN ZU DESSEN HERSTELLUNG
Title (fr)
TRANSISTOR VERTICAL A GRILLE MOBILE ET SON PROCEDE DE PRODUCTION
Publication
Application
Priority
- DE 10029501 A 20000621
- EP 0104702 W 20010426
Abstract (en)
[origin: DE10029501C1] Vertical field effect transistor made from a semiconductor wafer comprises a residual transistor consisting of a source region (42), a channel region (3), a drain region (1), and a moving gate structure (8) made from the semiconductor material arranged before the channel region. An Independent claim is also included for a process for producing a field effect transistor comprising defining the source, drain and channel regions of the residual transistor by forming doping layers in or on a semiconductor wafer; and defining the moving gate structure by isotropic and/or anisotropic etching. Preferred Features: The wafer material is single crystalline silicon. The residual transistor consists of vertical coated regions of different doping.
IPC 1-7
IPC 8 full level
B81B 3/00 (2006.01); G01L 9/00 (2006.01); G01P 15/08 (2006.01); G01P 15/12 (2006.01); H01L 21/336 (2006.01); H01L 29/78 (2006.01); H01L 29/84 (2006.01)
CPC (source: EP US)
G01L 9/0098 (2013.01 - EP US); G01P 15/0802 (2013.01 - EP US); G01P 15/124 (2013.01 - EP US); H01L 29/84 (2013.01 - EP US)
Citation (search report)
See references of WO 0198200A1
Designated contracting state (EPC)
AT BE CH CY DE DK FI FR GB LI NL
DOCDB simple family (publication)
DE 10029501 C1 20011004; EP 1292529 A1 20030319; JP 2004513506 A 20040430; US 2003173611 A1 20030918; US 6849912 B2 20050201; WO 0198200 A1 20011227
DOCDB simple family (application)
DE 10029501 A 20000621; EP 0104702 W 20010426; EP 01936280 A 20010426; JP 2002503646 A 20010426; US 31175903 A 20030212