EP 1292972 A2 20030319 - PLASMA RIE POLYMER REMOVAL
Title (en)
PLASMA RIE POLYMER REMOVAL
Title (de)
ENTFERNEN VON POLYMEREN DURCH PLASMA-RIE
Title (fr)
ENLEVEMENT DE POLYMERE PAR GRAVURE IONIQUE REACTIVE DU PLASMA
Publication
Application
Priority
- US 0120184 W 20010625
- US 60325400 A 20000623
Abstract (en)
[origin: WO0207203A2] A method for removal of post reactive ion etch by-product from a semiconductor wafer surface or microelectronic composite structure comprising:supplying a reducing gas plasma incorporating a forming gas mixture selected from the group consisting of a mixture of N2/H2 or a mixture of NH3/H2 into a vacuum chamber in which a semiconductor wafer surface or a microelectronic composite structure is supported to form a post-RIE polymer material by-product on the composite structure without significant removal of an organic, low K material which has also been exposed to the reducing gas plasma; and removing the post-RIE polymer material by-product with a wet clean.
IPC 1-7
IPC 8 full level
H01L 21/311 (2006.01); H01L 21/768 (2006.01)
CPC (source: EP KR US)
H01L 21/02063 (2013.01 - EP US); H01L 21/304 (2013.01 - KR); H01L 21/31138 (2013.01 - EP US); H01L 21/76804 (2013.01 - EP US); H01L 21/76807 (2013.01 - EP US); Y10S 134/902 (2013.01 - EP US); Y10S 438/906 (2013.01 - EP US)
Citation (search report)
See references of WO 0207203A2
Designated contracting state (EPC)
AT BE CH DE FR IT LI
DOCDB simple family (publication)
WO 0207203 A2 20020124; WO 0207203 A3 20020530; EP 1292972 A2 20030319; KR 20030010754 A 20030205; US 2002088476 A1 20020711; US 6758223 B1 20040706
DOCDB simple family (application)
US 0120184 W 20010625; EP 01952211 A 20010625; KR 20027017496 A 20021221; US 4375102 A 20020110; US 60325400 A 20000623