EP 1295326 A1 20030326 - SILICON BIPOLAR TRANSISTOR, CIRCUIT ARRANGEMENT AND METHOD FOR PRODUCTION OF A SILICON BIPOLAR TRANSISTOR
Title (en)
SILICON BIPOLAR TRANSISTOR, CIRCUIT ARRANGEMENT AND METHOD FOR PRODUCTION OF A SILICON BIPOLAR TRANSISTOR
Title (de)
SILIZIUM-BIPOLARTRANSISTOR, SCHALTUNGSANORDNUNG UND VERFAHREN ZUM HERSTELLEN EINES SILIZIUM-BIPOLARTRANSISTORS
Title (fr)
TRANSISTOR BIPOLAIRE AU SILICIUM, ENSEMBLE CIRCUIT ET PROCEDE DE FABRICATION D'UN TRANSISTOR BIPOLAIRE AU SILICIUM
Publication
Application
Priority
- DE 0102226 W 20010615
- DE 10029270 A 20000614
Abstract (en)
[origin: WO0197273A1] The silicon bipolar transistor (100) comprises a base, with a first highly-doped base layer (105) and a second poorly-doped base layer (106) which together form the base. The emitter is completely highly-doped and mounted directly on the second base layer (106).
IPC 1-7
IPC 8 full level
H01L 21/331 (2006.01); H01L 21/22 (2006.01); H01L 29/10 (2006.01); H01L 29/732 (2006.01); H01L 29/737 (2006.01)
CPC (source: EP KR US)
H01L 29/1004 (2013.01 - EP US); H01L 29/73 (2013.01 - KR)
Citation (search report)
See references of WO 0197273A1
Designated contracting state (EPC)
AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR
DOCDB simple family (publication)
WO 0197273 A1 20011220; CN 1248296 C 20060329; CN 1436366 A 20030813; EP 1295326 A1 20030326; JP 2004503936 A 20040205; KR 20030028483 A 20030408; TW 512529 B 20021201; US 2003178700 A1 20030925; US 7612430 B2 20091103
DOCDB simple family (application)
DE 0102226 W 20010615; CN 01811016 A 20010615; EP 01949264 A 20010615; JP 2002511378 A 20010615; KR 20027017051 A 20021213; TW 90114405 A 20010614; US 29742103 A 20030506