Global Patent Index - EP 1298110 A4

EP 1298110 A4 20070117 - POROUS SILICON NITRIDE ARTICLE AND METHOD FOR PRODUCTION THEREOF

Title (en)

POROUS SILICON NITRIDE ARTICLE AND METHOD FOR PRODUCTION THEREOF

Title (de)

PORÖSER SILICIUMNITRID GEGENSTAND UND VERFAHREN ZU DESSEN HERSTELLUNG

Title (fr)

ARTICLE A BASE DE NITRURE DE SILICIUM POREUX ET SON PROCEDE DE PRODUCTION

Publication

EP 1298110 A4 20070117 (EN)

Application

EP 02705468 A 20020325

Priority

  • JP 0202825 W 20020325
  • JP 2001087912 A 20010326

Abstract (en)

[origin: EP1298110A1] A silicon nitride porous body which is obtained by nitriding a molded body having metallic silicon as a main component and by performing a high temperature heating treatment at a temperature higher than the nitriding temperature, and which has a porous structure with an average pore diameter of 3 mu m or above, and contains at least one kind of element selected from the group consisting of the groups 2A, 3A, 3B inclusive of lanthanoid elements, and 4B. The silicon nitride porous body has a porous structure with a large average pore diameter, a test specimen cut out from the porous body exhibiting a high thermal conductivity and a small thermal expansion coefficient, and can be suitably used in a component for purifying gas and/or solution such as a ceramic filter.

IPC 1-7

C04B 38/00

IPC 8 full level

B01D 39/20 (2006.01); B01D 53/22 (2006.01); B01D 53/86 (2006.01); B01D 53/94 (2006.01); B01D 71/02 (2006.01); B01J 27/24 (2006.01); B01J 32/00 (2006.01); B01J 35/04 (2006.01); C04B 35/584 (2006.01); C04B 35/591 (2006.01); C04B 38/00 (2006.01)

CPC (source: EP US)

B01D 39/2068 (2013.01 - EP US); B01D 53/228 (2013.01 - EP US); B01D 67/0041 (2013.01 - EP); B01D 67/00411 (2022.08 - US); B01D 67/0044 (2013.01 - EP US); B01D 67/0046 (2013.01 - EP US); B01D 67/0069 (2013.01 - EP US); B01D 71/02 (2013.01 - EP); B01D 71/0215 (2022.08 - US); B01J 27/24 (2013.01 - EP US); B01J 35/56 (2024.01 - EP US); C04B 35/591 (2013.01 - EP US); C04B 38/0025 (2013.01 - EP US); B01D 2325/02 (2013.01 - EP US); B01D 2325/10 (2013.01 - EP US); B01D 2325/22 (2013.01 - EP US); C04B 2111/00793 (2013.01 - EP US); F01N 2330/00 (2013.01 - EP US); F01N 2330/30 (2013.01 - EP US)

C-Set (source: EP US)

  1. C04B 38/0025 + C04B 35/00 + C04B 35/584 + C04B 38/0054 + C04B 38/0074 + C04B 41/0072
  2. C04B 38/0025 + C04B 35/584 + C04B 38/0051

Citation (search report)

Designated contracting state (EPC)

BE DE FR

DOCDB simple family (publication)

EP 1298110 A1 20030402; EP 1298110 A4 20070117; EP 1298110 B1 20100106; DE 60234984 D1 20100225; JP 2002284586 A 20021003; JP 4473463 B2 20100602; US 2003186801 A1 20031002; US 6846764 B2 20050125; WO 02076908 A1 20021003; ZA 200209816 B 20031203

DOCDB simple family (application)

EP 02705468 A 20020325; DE 60234984 T 20020325; JP 0202825 W 20020325; JP 2001087912 A 20010326; US 31171402 A 20021219; ZA 200209816 A 20021203