EP 1304022 A1 20030423 - METHOD FOR MAKING A CIRCUITRY COMPRISING CONDUCTIVE TRACKS, CHIPS AND MICRO-VIAS AND USE OF SAME FOR PRODUCING PRINTED CIRCUITS AND MULTILAYER MODULES WITH HIGH DENSITY OF INTEGRATION
Title (en)
METHOD FOR MAKING A CIRCUITRY COMPRISING CONDUCTIVE TRACKS, CHIPS AND MICRO-VIAS AND USE OF SAME FOR PRODUCING PRINTED CIRCUITS AND MULTILAYER MODULES WITH HIGH DENSITY OF INTEGRATION
Title (de)
VERFAHREN ZUR HERSTELLUNG EINER SCHALTUNGSANORDNUNG MIT LEITENDEN BAHNEN, ANSCHLUSSFLÄCHEN UND MIKROKONTAKTLÖCHERN UND ANWENDUNG DIESES VERFAHREN FÜR DIE HERSTELLUNG VON GEDRUCKTEN SCHALTUNGEN UND MEHRSCHICHTIGEN MODULN MIT HOHER INTEGRATIONSDICHTE
Title (fr)
PROCEDE DE REALISATION D'UNE CIRCUITERIE COMPORTANT PISTES, PASTILLES ET MICROTRAVERSEES CONDUCTRICES ET UTILISATION DE CE PROCEDE POUR LA REALISATION DE CIRCUITS IMPRIMES ET DE MODULES MULTICOUCHES A HAUTE DENSITE D'INTEGRATION
Publication
Application
Priority
- FR 0102465 W 20010726
- FR 0009879 A 20000727
Abstract (en)
[origin: WO0211503A1] The invention concerns a method for making a circuitry comprising conductive tracks, chips and micro-vias, at the top surface of a dielectric (303) consisting of a polymer matrix, a compound capable of inducing subsequent metallization and, if required one or several non-conductive and inert fillers, said dielectric (303) covering a level of circuitry (302) or metallized layer, which comprises steps which consist in: a) perforating right through said dielectric (303) without perforating the subjacent metallized layer or the subjacent level of circuitry (302), so as to form one or several micro-vias (304) at desired sites; b) forming, by metallization, metal tracks (312), chips (313) and micro-vias (311) at the surface of the dielectric (314) and of the micro-vias (304), while providing selective protection by depositing a protective layer.
IPC 1-7
IPC 8 full level
C23C 18/16 (2006.01); C23C 18/31 (2006.01); H05K 3/00 (2006.01); H05K 3/40 (2006.01); H05K 3/42 (2006.01); H05K 3/46 (2006.01); H05K 3/10 (2006.01); H05K 3/18 (2006.01)
CPC (source: EP KR US)
H05K 3/40 (2013.01 - KR); H05K 3/4661 (2013.01 - EP US); H05K 3/0035 (2013.01 - EP US); H05K 3/108 (2013.01 - EP US); H05K 3/184 (2013.01 - EP US); H05K 2201/0236 (2013.01 - EP US); H05K 2203/073 (2013.01 - EP US); H05K 2203/1157 (2013.01 - EP US); H05K 2203/125 (2013.01 - EP US); Y10T 428/24917 (2015.01 - EP US)
Citation (search report)
See references of WO 0211503A1
Designated contracting state (EPC)
AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR
DOCDB simple family (publication)
WO 0211503 A1 20020207; AU 8223501 A 20020213; BR 0113133 A 20050111; CA 2417159 A1 20020207; CN 1456034 A 20031112; EP 1304022 A1 20030423; FR 2812515 A1 20020201; FR 2812515 B1 20030801; IL 154135 A0 20030731; JP 2002050873 A 20020215; KR 20020022123 A 20020325; MX PA03000797 A 20041101; RU 2003105458 A 20040820; TW 511438 B 20021121; US 2004048050 A1 20040311
DOCDB simple family (application)
FR 0102465 W 20010726; AU 8223501 A 20010726; BR 0113133 A 20010726; CA 2417159 A 20010726; CN 01815605 A 20010726; EP 01960838 A 20010726; FR 0009879 A 20000727; IL 15413501 A 20010726; JP 2001029339 A 20010206; KR 20010005708 A 20010206; MX PA03000797 A 20010726; RU 2003105458 A 20010726; TW 90102051 A 20010201; US 34302003 A 20030822