EP 1304186 B1 20090916 - Laser irradiation method and laser irradiation device and method of manufacturing semiconductor device
Title (en)
Laser irradiation method and laser irradiation device and method of manufacturing semiconductor device
Title (de)
Laserbestrahlungsverfahren und Laserbestrahlungsvorrichtung und Herstellungsverfahren für eine Halbleitervorrichtung
Title (fr)
Méthode d'irradiation à laser et dispositif à irradiation à laser et méthode de fabrication d'un dispositif à semiconducteur
Publication
Application
Priority
- JP 2001292410 A 20010925
- JP 2001328371 A 20011025
- JP 2002256189 A 20020830
Abstract (en)
[origin: EP1304186A2] The present invention is characterized in that by laser beam being slantly incident to the convex lens, an aberration such as astigmatism or the like is occurred, and the shape of the laser beam is made linear on the irradiation surface or in its neighborhood. Since the present invention has a very simple configuration, the optical adjustment is easier, and the device becomes compact in size. Furthermore, since the beam is slantly incident with respect to the irradiated body, the return beam can be prevented. <IMAGE>
IPC 8 full level
B23K 26/06 (2006.01); B23K 26/073 (2006.01); G02B 27/09 (2006.01); H01L 21/20 (2006.01); H01L 21/265 (2006.01); H01L 21/268 (2006.01); H01L 21/336 (2006.01); H01L 21/77 (2006.01); H01L 21/84 (2006.01); H01L 29/786 (2006.01); H01S 3/00 (2006.01); H01S 3/10 (2006.01)
CPC (source: EP KR US)
B23K 26/0604 (2013.01 - EP US); B23K 26/0608 (2013.01 - EP US); B23K 26/0732 (2013.01 - EP US); B23K 26/0736 (2013.01 - EP US); B23K 26/0738 (2013.01 - EP US); B23K 26/352 (2015.10 - EP US); H01L 21/02532 (2013.01 - US); H01L 21/02592 (2013.01 - US); H01L 21/02675 (2013.01 - US); H01L 21/268 (2013.01 - US); H01L 21/283 (2013.01 - US); H01L 27/1285 (2013.01 - EP US); H01L 27/1296 (2013.01 - EP US); H01S 3/10 (2013.01 - KR); B23K 2101/40 (2018.07 - EP US); H01L 27/14625 (2013.01 - EP US)
Designated contracting state (EPC)
DE FI FR GB NL
DOCDB simple family (publication)
EP 1304186 A2 20030423; EP 1304186 A3 20050622; EP 1304186 B1 20090916; CN 1280880 C 20061018; CN 1409382 A 20030409; DE 60233706 D1 20091029; JP 2003257885 A 20030912; JP 4397571 B2 20100113; KR 100929505 B1 20091203; KR 100936642 B1 20100114; KR 20030026906 A 20030403; KR 20090019886 A 20090225; KR 20090077748 A 20090715; KR 20090079860 A 20090722; SG 120886 A1 20060426; SG 143971 A1 20080729; SG 151086 A1 20090430; TW 200710999 A 20070316; TW I279863 B 20070421; TW I282649 B 20070611; US 10366885 B2 20190730; US 10910219 B2 20210202; US 2003086182 A1 20030508; US 2006215721 A1 20060928; US 2006215722 A1 20060928; US 2014113440 A1 20140424; US 2017062214 A1 20170302; US 2019348286 A1 20191114; US 7138306 B2 20061121; US 7943885 B2 20110517; US 8686315 B2 20140401; US 9748099 B2 20170829
DOCDB simple family (application)
EP 02021768 A 20020925; CN 02143428 A 20020925; DE 60233706 T 20020925; JP 2002256189 A 20020830; KR 20020058161 A 20020925; KR 20090007054 A 20090129; KR 20090059655 A 20090701; KR 20090059660 A 20090701; SG 200205715 A 20020920; SG 2005028782 A 20020920; SG 2005028790 A 20020920; TW 91121907 A 20020924; TW 95137150 A 20020924; US 201314145235 A 20131231; US 201615350777 A 20161114; US 201916522930 A 20190726; US 25282802 A 20020924; US 43356906 A 20060515; US 43367006 A 20060515