EP 1305834 A1 20030502 - FIELD EFFECT TRANSISTOR, CIRCUIT ARRANGEMENT AND METHOD FOR PRODUCTION OF A FIELD EFFECT TRANSISTOR
Title (en)
FIELD EFFECT TRANSISTOR, CIRCUIT ARRANGEMENT AND METHOD FOR PRODUCTION OF A FIELD EFFECT TRANSISTOR
Title (de)
FELDEFFEKTTRANSISTOR, SCHALTUNGSANORDNUNG UND VERFAHREN ZUM HERSTELLEN EINES FELDEFFEKTTRANSISTORS
Title (fr)
TRANSISTOR A EFFET DE CHAMP, CIRCUIT, ET PROCEDE DE FABRICATION D'UN TEL TRANSISTOR A EFFET DE CHAMP
Publication
Application
Priority
- DE 0102708 W 20010719
- DE 10036897 A 20000728
Abstract (en)
[origin: DE10036897C1] Field effect transistor comprises a gate region (104) between a source region (102) and a drain region (110). The gate region contains a conducting material provided with a passage with a nano-element electrically coupled with the source region and the drain region. The nano-element is arranged and structured in such a way that it can be controlled via gate region and it forms a channel region. An Independent claim is also included for a process for the production of the field effect transistor. Preferred Features: The nano-element is a nano-tube and/or nano-wire. The gate region is a conducting layer. The nano-wire is a silicon nano-wire. The nano-tube is a carbon nano-tube. The nano-element has a heterostructure with an electrically insulating region between a first metallic region and a second metallic region.
IPC 1-7
IPC 8 full level
B82B 1/00 (2006.01); B82B 3/00 (2006.01); H01L 21/335 (2006.01); H01L 29/15 (2006.01); H01L 29/16 (2006.01); H01L 29/76 (2006.01); H01L 29/775 (2006.01); H01L 29/78 (2006.01); H01L 51/30 (2006.01); H01L 51/00 (2006.01)
CPC (source: EP US)
B82Y 10/00 (2013.01 - EP US); H01L 29/0665 (2013.01 - EP US); H01L 29/0673 (2013.01 - EP US); H01L 29/0676 (2013.01 - EP US); H01L 29/66439 (2013.01 - EP US); H01L 29/775 (2013.01 - EP US); H01L 29/78642 (2013.01 - EP US); H10K 10/462 (2023.02 - EP US); H10K 85/221 (2023.02 - EP US); H10K 85/615 (2023.02 - EP US); Y10S 977/938 (2013.01 - EP US)
Citation (search report)
See references of WO 0211216A1
Designated contracting state (EPC)
AT BE CH CY DE FR GB IT LI
DOCDB simple family (publication)
DE 10036897 C1 20020103; EP 1305834 A1 20030502; US 2003132461 A1 20030717; US 6740910 B2 20040525; WO 0211216 A1 20020207
DOCDB simple family (application)
DE 10036897 A 20000728; DE 0102708 W 20010719; EP 01960126 A 20010719; US 35283003 A 20030128