EP 1309990 A1 20030514 - REMOVAL OF PHOTORESIST AND PHOTORESIST RESIDUE FROM SEMICONDUCTORS USING SUPERCRITICAL CARBON DIOXIDE PROCESS
Title (en)
REMOVAL OF PHOTORESIST AND PHOTORESIST RESIDUE FROM SEMICONDUCTORS USING SUPERCRITICAL CARBON DIOXIDE PROCESS
Title (de)
ENTFERNUNG VON PHOTORESIST UND PHOTORESISTRÜCKSTÄNDEN AUF HALBLEITERN DURCH EIN ÜBERKRITISCHES KOHLENDIOXID-VERFAHREN
Title (fr)
ELIMINATION DE PHOTORESINE ET DE RESTES DE PHOTORESINE D'UN SEMI-CONDUCTEUR AU MOYEN DE DIOXYDE DE CARBONE SUPERCRITIQUE
Publication
Application
Priority
US 0022454 W 20000814
Abstract (en)
[origin: WO0215251A1] A method of removing a photoresist or a photoresist residue from a semiconductor substrate is disclosed. The semiconductor substrate with the photoresist or the photoresist residue on a surface of the semiconductor substrate is placed within a pressure chamber. The pressure chamber is then pressurized. Supercritical carbon dioxide and a stripper chemical are introduced to the pressure chamber. The supercritical carbon dioxide and the stripper chemical are maintained in contact with the photoresist or the photoresist residue until the photoresist or the photoresist residue is removed from the semiconductor substrate. The pressure chamber is then flushed and vented. In an alternative embodiment, supercritical CO2 carries organic or inorganic chemicals or a combination of the organic and inorganic chemicals into the pressure chamber. The organic or inorganic chemicals or a combination of the organic and inorganic chemicals interacts with resist, resist residues, and organic contaminants on the wafer surface and carry these materials and remaining chemicals out of the chamber.
IPC 1-7
H01L 21/311; H01L 21/3213; H01L 21/306; G03F 7/42; B08B 7/00
IPC 8 full level
B08B 7/00 (2006.01); G03F 7/42 (2006.01); H01L 21/02 (2006.01); H01L 21/027 (2006.01); H01L 21/304 (2006.01); H01L 21/306 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01)
CPC (source: EP KR)
B08B 7/0021 (2013.01 - EP); G03F 7/425 (2013.01 - EP); H01L 21/02063 (2013.01 - EP); H01L 21/02071 (2013.01 - EP); H01L 21/304 (2013.01 - KR); H01L 21/31133 (2013.01 - EP)
Citation (search report)
See references of WO 0215251A1
Designated contracting state (EPC)
AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE
DOCDB simple family (publication)
WO 0215251 A1 20020221; AU 6644200 A 20020225; CN 1246888 C 20060322; CN 1454392 A 20031105; EP 1309990 A1 20030514; JP 2004507087 A 20040304; KR 100559017 B1 20060310; KR 20030024873 A 20030326
DOCDB simple family (application)
US 0022454 W 20000814; AU 6644200 A 20000814; CN 00819817 A 20000814; EP 00954102 A 20000814; JP 2002520287 A 20000814; KR 20037002209 A 20030214