EP 1310004 A2 20030514 - ORGANIC FIELD-EFFECT TRANSISTOR (OFET), A PRODUCTION METHOD THEREFOR, AN INTEGRATED CIRCUIT CONSTRUCTED FROM THE SAME AND THEIR USES
Title (en)
ORGANIC FIELD-EFFECT TRANSISTOR (OFET), A PRODUCTION METHOD THEREFOR, AN INTEGRATED CIRCUIT CONSTRUCTED FROM THE SAME AND THEIR USES
Title (de)
ORGANISCHER FELDEFFEKT-TRANSISTOR (OFET), HERSTELLUNGSVERFAHREN DAZU UND DARAUS GEBAUTE INTEGRIERTE SCHALTUNG SOWIE VERWENDUNGEN
Title (fr)
TRANSISTOR A EFFET DE CHAMP ORGANIQUE (OFET), PROCEDE DE FABRICATION ET CIRCUIT INTEGRE COMPORTANT CELUI-CI, ET LEURS UTILISATIONS
Publication
Application
Priority
- DE 0103163 W 20010817
- DE 10040441 A 20000818
- DE 10057502 A 20001120
- DE 10057665 A 20001121
Abstract (en)
[origin: WO0215293A2] The invention relates to an organic field-effect transistor with an improved performance. The output current is increased by the arrangement of several current channels on the OFET, all of which contribute to the output current. By positioning the source and drain electrode on a plane which is not parallel to the surface of the substrate, it is possible to reduce the distances between the source and the drain in relation to those previously attainable. This produces shorter current channels with faster switching speeds. Finally, the invention relates to integrated circuits, which are stacked on a substrate to save space.
IPC 1-7
IPC 8 full level
H01L 21/336 (2006.01); H01L 27/28 (2006.01); H01L 29/786 (2006.01); H01L 51/05 (2006.01); H01L 51/40 (2006.01); H01L 51/00 (2006.01); H01L 51/30 (2006.01)
CPC (source: EP US)
H10K 10/468 (2023.02 - EP US); H10K 10/491 (2023.02 - EP US); H10K 19/00 (2023.02 - EP US); H10K 71/13 (2023.02 - EP US); H10K 85/113 (2023.02 - EP US)
Citation (search report)
See references of WO 0215293A2
Designated contracting state (EPC)
DE FR GB
DOCDB simple family (publication)
WO 0215293 A2 20020221; WO 0215293 A3 20020801; EP 1310004 A2 20030514; JP 2004507096 A 20040304; US 2004029310 A1 20040212
DOCDB simple family (application)
DE 0103163 W 20010817; EP 01964917 A 20010817; JP 2002520322 A 20010817; US 34495103 A 20030714