EP 1314209 A1 20030528 - METHOD FOR PRODUCING A RADIATION-EMITTING SEMICONDUCTOR CHIP BASED ON III-V NITRIDE SEMICONDUCTOR MATERIAL, AND A CORRESPONDING RADIATION-EMITTING SEMICONDUCTOR CHIP
Title (en)
METHOD FOR PRODUCING A RADIATION-EMITTING SEMICONDUCTOR CHIP BASED ON III-V NITRIDE SEMICONDUCTOR MATERIAL, AND A CORRESPONDING RADIATION-EMITTING SEMICONDUCTOR CHIP
Title (de)
VERFAHREN ZUM HERSTELLEN EINES STRAHLUNGSEMITTIERENDEN HALBLEITERCHIPS AUF III-V-NITRIDHALBLEITER-BASIS UND STRAHLUNGSEMITTIERENDER HALBLEITERCHIP
Title (fr)
PROCEDE POUR PRODUIRE UNE PUCE A SEMI-CONDUCTEUR PHOTOEMETTRICE A BASE DE SEMI-CONDUCTEUR NITRURE III-V ET PUCE A SEMI-CONDUCTEUR PHOTOEMETTRICE CORRESPONDANTE
Publication
Application
Priority
- DE 0103348 W 20010831
- DE 10042947 A 20000831
Abstract (en)
[origin: WO0219439A1] The invention relates to a method for producing a radiation-emitting semiconductor chip comprising a thin-layer element (11) based on III-V nitride semiconductor material. According to the inventive method, a series of layers of the thin-layer element (11) is deposited onto an epitaxial substrate (100), the thin-layer element is joined to a support (5), and the epitaxial substrate (100) is removed from the thin-layer element. The epitaxial substrate (100) comprises a substrate body (1), which is made of PolySiC or PolyGaN or of SiC, GaN or sapphire and which is joined to an epitaxial growth layer (2) by means of an adhesive layer (3), and the series of layers of the thin-layer element is epitaxially deposited on said epitaxial growth layer. The invention also relates to a radiation-emitting semiconductor chip that is produced in the aforementioned manner.
IPC 1-7
IPC 8 full level
H01L 33/00 (2010.01); H01S 5/343 (2006.01)
CPC (source: EP US)
B82Y 20/00 (2013.01 - EP US); H01L 33/007 (2013.01 - EP US); H01L 33/0075 (2013.01 - EP US); H01L 33/0093 (2020.05 - EP US); H01S 5/34333 (2013.01 - EP US)
Citation (search report)
See references of WO 0219439A1
Designated contracting state (EPC)
DE FR GB
DOCDB simple family (publication)
WO 0219439 A1 20020307; CN 1471735 A 20040128; CN 1471735 B 20100526; DE 10042947 A1 20020321; EP 1314209 A1 20030528; EP 1314209 B1 20121003; JP 2004508720 A 20040318; JP 2007201493 A 20070809; JP 4177097 B2 20081105; JP 5183085 B2 20130417; TW 584971 B 20040421; US 2003197170 A1 20031023; US 2005104083 A1 20050519; US 6849878 B2 20050201; US 7105370 B2 20060912
DOCDB simple family (application)
DE 0103348 W 20010831; CN 01818140 A 20010831; DE 10042947 A 20000831; EP 01967062 A 20010831; JP 2002524235 A 20010831; JP 2007072671 A 20070320; TW 90121292 A 20010830; US 1761504 A 20041220; US 37736303 A 20030228