EP 1315598 A2 20030604 - METHOD AND APPARATUS FOR MEASURING A POLISHING CONDITION
Title (en)
METHOD AND APPARATUS FOR MEASURING A POLISHING CONDITION
Title (de)
VERFAHREN UND VORRICHTUNG ZUM MESSEN EINES POLIERZUSTANDES
Title (fr)
PROCEDE ET APPAREIL PERMETTANT DE MESURER UN ETAT DE POLISSAGE
Publication
Application
Priority
- IB 0101532 W 20010827
- US 65289800 A 20000831
Abstract (en)
[origin: WO0218100A2] In a method for determining the condition of the surface, such as thickness or reflectivity, of any specific location on a wafer (16) during a chemical mechanical polishing (CMP), at first, a location of a measurement site on the wafer surface is selected. Second, a picture (22) of the surface within the measurement site is taken, for example, through a window (14). Third, the picture is analyzed. This provides an exact endpointing and an exact final thickness of a specific layer on the wafer.
IPC 1-7
IPC 8 full level
B24B 37/013 (2012.01); B24B 37/04 (2006.01); B24B 49/12 (2006.01); H01L 21/304 (2006.01)
CPC (source: EP KR)
B24B 37/013 (2013.01 - EP); B24B 49/12 (2013.01 - EP); H01L 22/00 (2013.01 - KR)
Citation (search report)
See references of WO 0218100A2
Designated contracting state (EPC)
DE FR IE
DOCDB simple family (publication)
WO 0218100 A2 20020307; WO 0218100 A3 20020516; EP 1315598 A2 20030604; JP 2004507900 A 20040311; KR 20030024920 A 20030326; TW 534854 B 20030601
DOCDB simple family (application)
IB 0101532 W 20010827; EP 01956736 A 20010827; JP 2002523057 A 20010827; KR 20037002903 A 20030227; TW 90120554 A 20010821