Global Patent Index - EP 1315941 A2

EP 1315941 A2 2003-06-04 - ELECTRO-EXPLOSIVE DEVICE WITH LAMINATE BRIDGE

Title (en)

ELECTRO-EXPLOSIVE DEVICE WITH LAMINATE BRIDGE

Title (de)

ELEKTRISCHER BRÜCKENZÜNDER MIT EINER MEHRSCHICHTIGEN BRÜCKE

Title (fr)

DISPOSITIF ELECTRO-EXPLOSIF MUNI D'UN PONT LAMINE

Publication

EP 1315941 A2 (EN)

Application

EP 01972969 A

Priority

  • US 0128193 W
  • US 65652300 A

Abstract (en)

[origin: WO0221067A2] A semiconductor bridge (SCB) device. In one embodiment, the SCB device (10) includes a laminate layer on top of an insulating material, wherein the laminate layer comprises a series of layers (107, 108) of at least two reactive materials, and wherein the laminate layer comprises two relatively large sections that substantially cover the surface area of the insulating material, and a bridge section (106) joining the two relatively large sections. At least one conductive contact pad is coupled to at least one of the series of layers, wherein a predetermined current through the conductive contact pad causes the bridge section to initiate a reaction in which the laminate layer is involved. In one embodiment, the SCB device includes an integrated diode (102) formed by an interface of the insulating material with another material, such as a metal.

[origin: WO0221067A2] A semiconductor bridge (SCB) device. In one embodiment, the SCB device includes a laminate layer on top of an insulating material, wherein the laminate layer comprises a series of layers of at least two reactive materials, and wherein the laminate layer comprises two relatively large sections that substantially cover the surface area of the insulating material, and a bridge section joining the two relatively large sections. At least one conductive contact pad is coupled to at least one of the series of layers, wherein a predetermined current through the conductive contact pad causes the bridge section to initiate a reaction in which the laminate layer is involved. In one embodiment, the SCB device includes an integrated diode formed by an interface of the insulating material with another material, such as a metal.

IPC 1-7 (main, further and additional classification)

F42B 3/13; F42B 3/198

IPC 8 full level (invention and additional information)

F42B 3/13 (2006.01); F42B 3/198 (2006.01)

CPC (invention and additional information)

F42B 3/198 (2013.01); F42B 3/13 (2013.01)

Citation (search report)

See references of WO 0221067A3

Designated contracting state (EPC)

AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR

EPO simple patent family

WO 0221067 A2 20020314; WO 0221067 A3 20020613; WO 0221067 A9 20030320; AT 322664 T 20060415; AU 9259601 A 20020322; DE 60118581 D1 20060518; DE 60118581 T2 20070621; EP 1315941 A2 20030604; EP 1315941 B1 20060405; HK 1056390 A1 20060901; JP 2004513319 A 20040430; JP 4848118 B2 20111228; KR 100722721 B1 20070529; KR 20030034174 A 20030501

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2005-09-28 [RTI1] TITLE (CORRECTION)

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