EP 1317771 A1 20030611 - IMPROVED SEMICONDUCTOR STRUCTURE AND METHOD OF FABRICATION
Title (en)
IMPROVED SEMICONDUCTOR STRUCTURE AND METHOD OF FABRICATION
Title (de)
VERBESSERTE HALBLEITERVORRICHTUNG UND HERSTELLUNGSVERFAHREN
Title (fr)
STRUCTURE SEMI-CONDUCTRICE AMELIOREE ET PROCEDE DE FABRICATION
Publication
Application
Priority
- US 0126645 W 20010824
- US 66269100 A 20000914
Abstract (en)
[origin: WO0223626A1] High aspect ratio vias formed in a first insulating layer (34) covering a semiconductor substrate are filled with conductors in a manner: sidewalls and botton of each via are coated with a composite layer (44,46,48) of titanium nitride, and a CVD seed layer of aluminium. A first PVD aluminium layer is then formed while the semiconductor body is heated to about 400 degrees Cso that it fills the vias (38) and forms a first overlying blanket layer (50). A second PVD blanket layer of aluminium (55) is then formed at about 200 degrees C. Both aluminium layers are patterned and etched to result incolumns of aluminium around which a second insulating layer (62) is then formed. The ends of the columns of aluminium at a top of the second insulating layerlie in common plane to which steppers can relatively easily align patterns.
IPC 1-7
IPC 8 full level
H01L 21/3205 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01)
CPC (source: EP KR US)
H01L 21/28 (2013.01 - KR); H01L 21/32051 (2013.01 - EP US); H01L 21/7684 (2013.01 - EP US); H01L 21/76843 (2013.01 - EP US); H01L 21/76876 (2013.01 - EP US); H01L 21/76885 (2013.01 - EP US); H01L 23/5226 (2013.01 - EP US); H01L 23/5329 (2013.01 - EP US); H01L 2924/0002 (2013.01 - EP US)
Citation (search report)
See references of WO 0223626A1
Designated contracting state (EPC)
AT BE CH CY DE FR GB IE IT LI
DOCDB simple family (publication)
WO 0223626 A1 20020321; DE 60142481 D1 20100812; EP 1317771 A1 20030611; EP 1317771 B1 20100630; KR 20030040460 A 20030522; US 6373135 B1 20020416
DOCDB simple family (application)
US 0126645 W 20010824; DE 60142481 T 20010824; EP 01968153 A 20010824; KR 20037003687 A 20030313; US 66269100 A 20000914