Global Patent Index - EP 1317777 A1

EP 1317777 A1 2003-06-11 - SEMICONDUCTOR MEMORY CELL COMPRISING A TRENCH CAPACITOR AND A SELECT TRANSISTOR AND A METHOD FOR THE PRODUCTION THEREOF

Title (en)

SEMICONDUCTOR MEMORY CELL COMPRISING A TRENCH CAPACITOR AND A SELECT TRANSISTOR AND A METHOD FOR THE PRODUCTION THEREOF

Title (de)

HALBLEITERSPEICHERZELLE MIT GRABENKONDENSATOR UND AUSWAHLTRANSISTOR UND VERFAHREN ZU IHRER HERSTELLUNG

Title (fr)

CELLULE DE MEMOIRE A SEMI-CONDUCTEUR POURVUE D'UN CONDENSATEUR EN TRANCHEE ET D'UN TRANSISTOR DE SELECTION, ET SON PROCEDE DE PRODUCTION

Publication

EP 1317777 A1 (DE)

Application

EP 01962672 A

Priority

  • DE 0103235 W
  • DE 10045694 A

Abstract (en)

[origin: WO0223636A1] The invention relates to a semiconductor memory cell (1), which is formed in a substrate (2) and comprises a trench capacitor (3) and a select transistor (4). The trench capacitor (3) comprises a capacitor dielectric (8) and a conductive trench fill material (10). A diffusion barrier (19) is located on the conductive trench fill material (10) and an epitaxial layer (24) is formed on top of said barrier. The select transistor (4) is a planar transistor, positioned above the trench capacitor (3), whereby a drain doping region (13) of said select transistor (4) is located in the epitaxial layer (24).

IPC 1-7 (main, further and additional classification)

H01L 27/108; H01L 21/8242

IPC 8 full level (invention and additional information)

H01L 21/8242 (2006.01); H01L 27/108 (2006.01)

CPC (invention and additional information)

H01L 27/10861 (2013.01); H01L 27/10832 (2013.01)

Citation (search report)

See references of WO 0223636A1

Designated contracting state (EPC)

AT BE CH CY DE FR GB IE IT LI

EPO simple patent family

WO 0223636 A1 20020321; DE 10045694 A1 20020404; EP 1317777 A1 20030611; JP 2004509469 A 20040325; KR 100523881 B1 20051026; KR 20030038742 A 20030516; TW 518751 B 20030121; US 2003168690 A1 20030911; US 7049647 B2 20060523

INPADOC legal status


2009-08-19 [18D] APPLICATION DEEMED TO BE WITHDRAWN

- Effective date: 20090303

2006-10-25 [17Q] FIRST EXAMINATION REPORT

- Effective date: 20060920

2004-05-19 [RBV] DESIGNATED CONTRACTING STATES (CORRECTION)

- Designated State(s): AT BE CH CY DE FR GB IE IT LI

2003-06-11 [17P] REQUEST FOR EXAMINATION FILED

- Effective date: 20030317

2003-06-11 [AK] DESIGNATED CONTRACTING STATES:

- Designated State(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR