EP 1317777 A1 20030611 - SEMICONDUCTOR MEMORY CELL COMPRISING A TRENCH CAPACITOR AND A SELECT TRANSISTOR AND A METHOD FOR THE PRODUCTION THEREOF
Title (en)
SEMICONDUCTOR MEMORY CELL COMPRISING A TRENCH CAPACITOR AND A SELECT TRANSISTOR AND A METHOD FOR THE PRODUCTION THEREOF
Title (de)
HALBLEITERSPEICHERZELLE MIT GRABENKONDENSATOR UND AUSWAHLTRANSISTOR UND VERFAHREN ZU IHRER HERSTELLUNG
Title (fr)
CELLULE DE MEMOIRE A SEMI-CONDUCTEUR POURVUE D'UN CONDENSATEUR EN TRANCHEE ET D'UN TRANSISTOR DE SELECTION, ET SON PROCEDE DE PRODUCTION
Publication
Application
Priority
- DE 0103235 W 20010824
- DE 10045694 A 20000915
Abstract (en)
[origin: WO0223636A1] The invention relates to a semiconductor memory cell (1), which is formed in a substrate (2) and comprises a trench capacitor (3) and a select transistor (4). The trench capacitor (3) comprises a capacitor dielectric (8) and a conductive trench fill material (10). A diffusion barrier (19) is located on the conductive trench fill material (10) and an epitaxial layer (24) is formed on top of said barrier. The select transistor (4) is a planar transistor, positioned above the trench capacitor (3), whereby a drain doping region (13) of said select transistor (4) is located in the epitaxial layer (24).
IPC 1-7
IPC 8 full level
H01L 21/8242 (2006.01); H01L 27/108 (2006.01)
CPC (source: EP KR US)
H10B 12/00 (2023.02 - KR); H10B 12/038 (2023.02 - EP US); H10B 12/373 (2023.02 - EP US)
Citation (search report)
See references of WO 0223636A1
Designated contracting state (EPC)
AT BE CH CY DE FR GB IE IT LI
DOCDB simple family (publication)
WO 0223636 A1 20020321; DE 10045694 A1 20020404; EP 1317777 A1 20030611; JP 2004509469 A 20040325; KR 100523881 B1 20051026; KR 20030038742 A 20030516; TW 518751 B 20030121; US 2003168690 A1 20030911; US 7049647 B2 20060523
DOCDB simple family (application)
DE 0103235 W 20010824; DE 10045694 A 20000915; EP 01962672 A 20010824; JP 2002527580 A 20010824; KR 20037003809 A 20030314; TW 90122850 A 20010914; US 39087103 A 20030317