EP 1318552 A1 20030611 - Small area contact region, high efficiency phase change memory cell and fabrication method thereof
Title (en)
Small area contact region, high efficiency phase change memory cell and fabrication method thereof
Title (de)
Kleinflächige Kontaktzone, hocheffizientes Phasenwechsel-Speicherelement und dessen Verfahren zur Herstellung
Title (fr)
Région de contact à faible surface, élément de mémoire à changement de phase à efficience élevée et sa procédé de fabrication
Publication
Application
Priority
EP 01128461 A 20011205
Abstract (en)
A contact structure (30) in an electronic semiconductor device, including a first conducting region (31) having a first thin portion with a first sublithographic dimension in a first direction; a second conducting region (32) having a second thin portion (32a) with a second sublithographic dimension in a second direction transverse to said first direction; the first and second conducting regions being in direct electrical contact at the first and second thin portions and defining a contact area (33) having a sublithografic extension, lower than 100 nm, preferably about 20 nm. The thin sublithographic portions are obtained using deposition instead of lithography: the first thin portion is deposed on a wall of an opening in a first dielectric layer (34); the second thin portion is obtained by deposing a sacrificial region on vertical wall of a first delimitation layer, deposing a second delimitation layer on the free side of the sacrificial region, removing the sacrificial region to form a sublithographic hard mask opening that is used to etch a mold opening (40) in a mold layer (38) and filling the mold opening. <IMAGE> <IMAGE>
IPC 1-7
IPC 8 full level
G11C 16/02 (2006.01); H01L 27/10 (2006.01); H01L 27/105 (2006.01); H01L 27/24 (2006.01); H01L 45/00 (2006.01)
CPC (source: EP US)
G11C 13/0004 (2013.01 - EP US); H10B 63/32 (2023.02 - EP US); H10N 70/068 (2023.02 - EP US); H10N 70/231 (2023.02 - EP US); H10N 70/826 (2023.02 - EP US); H10N 70/8413 (2023.02 - EP US); H10N 70/8828 (2023.02 - EP US); Y10S 438/947 (2013.01 - EP US)
Citation (search report)
- [XY] US 6031287 A 20000229 - HARSHFIELD STEVEN T [US]
- [Y] US 5814527 A 19980929 - WOLSTENHOLME GRAHAM R [US], et al
- [X] WO 0057498 A1 20000928 - ENERGY CONVERSION DEVICES INC [US]
- [E] WO 0209206 A1 20020131 - OVONYX INC [US]
- [X] PALUN L ET AL: "Fabrication of Single Electron Devices by hybrid (E-Beam/DUV) lithography", MICROELECTRONIC ENGINEERING, ELSEVIER PUBLISHERS BV., AMSTERDAM, NL, vol. 53, no. 1-4, June 2000 (2000-06-01), pages 167 - 170, XP004237745, ISSN: 0167-9317
Citation (examination)
US 5667632 A 19970916 - BURTON RICHARD S [US], et al
Designated contracting state (EPC)
DE FR GB IT
DOCDB simple family (publication)
EP 1318552 A1 20030611; JP 2003174144 A 20030620; JP 4729236 B2 20110720; US 2003219924 A1 20031127; US 7227171 B2 20070605
DOCDB simple family (application)
EP 01128461 A 20011205; JP 2002353352 A 20021205; US 31399102 A 20021205