EP 1320877 A2 20030625 - SILICON OXIDE PATTERNING USING CVD PHOTORESIST
Title (en)
SILICON OXIDE PATTERNING USING CVD PHOTORESIST
Title (de)
SILIZIUMOXYDSTRUKTURIERUNG MITTELS CVD-PHOTOLACKS
Title (fr)
MODELAGE D'OXYDE DE SILICIUM AU MOYEN D'UN PHOTORESIST CVD
Publication
Application
Priority
- US 0126999 W 20010830
- US 67074300 A 20000927
Abstract (en)
[origin: WO0227777A2] An integrated circuit, and method of forming thereof, comprising CVD photoresist (e.g., PPMS 202) is formed on a substrate (e.g., silicon 200), patterned and converted into silicon oxide, and is left on the substrate to function as a silicon oxide layer (e.g., PPMSO 204). A high quality cap layer (e.g., PECVD silicon oxide 212) may then be formed over the lower quality silicon oxide layer utilizing a maskless etch process. A high quality silicon oxide layer (e.g. silicon oxide 308) may be formed on the substrate prior to formation of the CVD photoresist layer to provide a buffer underneath the lower quality silicon oxide. Because etch selectivity is generally not required for the photoresist layer, a thinner photoresist may be used than that of prior art techniques, permitting a larger lithographic process window, increased depth of focus, and a more robust process.
IPC 1-7
IPC 8 full level
H01L 21/312 (2006.01)
CPC (source: EP KR)
H01L 21/02126 (2013.01 - EP); H01L 21/02167 (2013.01 - EP); H01L 21/02211 (2013.01 - EP); H01L 21/02274 (2013.01 - EP); H01L 21/02304 (2013.01 - EP); H01L 21/02323 (2013.01 - EP); H01L 21/02337 (2013.01 - EP); H01L 21/02348 (2013.01 - EP); H01L 21/02362 (2013.01 - EP); H01L 21/027 (2013.01 - KR)
Citation (search report)
See references of WO 0227777A2
Designated contracting state (EPC)
DE FR GB IE IT
DOCDB simple family (publication)
WO 0227777 A2 20020404; WO 0227777 A3 20020829; EP 1320877 A2 20030625; KR 100564170 B1 20060327; KR 20030067670 A 20030814
DOCDB simple family (application)
US 0126999 W 20010830; EP 01964510 A 20010830; KR 20037004357 A 20030326