Global Patent Index - EP 1320877 A2

EP 1320877 A2 2003-06-25 - SILICON OXIDE PATTERNING USING CVD PHOTORESIST

Title (en)

SILICON OXIDE PATTERNING USING CVD PHOTORESIST

Title (de)

SILIZIUMOXYDSTRUKTURIERUNG MITTELS CVD-PHOTOLACKS

Title (fr)

MODELAGE D'OXYDE DE SILICIUM AU MOYEN D'UN PHOTORESIST CVD

Publication

EP 1320877 A2 (EN)

Application

EP 01964510 A

Priority

  • US 0126999 W
  • US 67074300 A

Abstract (en)

[origin: WO0227777A2] An integrated circuit, and method of forming thereof, comprising CVD photoresist (e.g., PPMS 202) is formed on a substrate (e.g., silicon 200), patterned and converted into silicon oxide, and is left on the substrate to function as a silicon oxide layer (e.g., PPMSO 204). A high quality cap layer (e.g., PECVD silicon oxide 212) may then be formed over the lower quality silicon oxide layer utilizing a maskless etch process. A high quality silicon oxide layer (e.g. silicon oxide 308) may be formed on the substrate prior to formation of the CVD photoresist layer to provide a buffer underneath the lower quality silicon oxide. Because etch selectivity is generally not required for the photoresist layer, a thinner photoresist may be used than that of prior art techniques, permitting a larger lithographic process window, increased depth of focus, and a more robust process.

IPC 1-7 (main, further and additional classification)

H01L 21/312

IPC 8 full level (invention and additional information)

H01L 21/312 (2006.01)

CPC (invention and additional information)

H01L 21/02126 (2013.01); H01L 21/02167 (2013.01); H01L 21/02211 (2013.01); H01L 21/02274 (2013.01); H01L 21/02304 (2013.01); H01L 21/02323 (2013.01); H01L 21/02337 (2013.01); H01L 21/02348 (2013.01); H01L 21/02362 (2013.01); H01L 21/3122 (2013.01)

Citation (search report)

See references of WO 0227777A3

Designated contracting state (EPC)

DE FR GB IE IT

EPO simple patent family

WO 0227777 A2 20020404; WO 0227777 A3 20020829; EP 1320877 A2 20030625; KR 100564170 B1 20060327; KR 20030067670 A 20030814

INPADOC legal status


2011-08-17 [18D] APPLICATION DEEMED TO BE WITHDRAWN

- Effective date: 20110301

2006-12-06 [17Q] FIRST EXAMINATION REPORT

- Effective date: 20061103

2004-05-26 [RBV] DESIGNATED CONTRACTING STATES (CORRECTION)

- Designated State(s): DE FR GB IE IT

2003-06-25 [17P] REQUEST FOR EXAMINATION FILED

- Effective date: 20030324

2003-06-25 [AK] DESIGNATED CONTRACTING STATES:

- Designated State(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR