Global Patent Index - EP 1320901 A1

EP 1320901 A1 2003-06-25 - IMPROVED BUFFER FOR GROWTH OF GaN ON SAPPHIRE

Title (en)

IMPROVED BUFFER FOR GROWTH OF GaN ON SAPPHIRE

Title (de)

VERBESSERTER PUFFER ZUM WACHSTUM VON GaN AUF SAPHIR

Title (fr)

TAMPON AMELIORE DESTINE A LA CROISSANCE DE GAN SUR SAPHIR

Publication

EP 1320901 A1 (EN)

Application

EP 01961721 A

Priority

  • US 0123330 W
  • US 62644200 A

Abstract (en)

[origin: WO0209199A1] A GaN based three layer buffer (11) on a sapphire substrate (101) provides a template for growth of a high quality I GaN layer (105) as a substrate for growth of a Nitride based LED.

IPC 1-7 (main, further and additional classification)

H01L 33/00

IPC 8 full level (invention and additional information)

H01L 21/02 (2006.01); H01L 21/20 (2006.01); H01L 33/00 (2010.01)

CPC (invention and additional information)

H01L 21/0254 (2013.01); H01L 21/0242 (2013.01); H01L 21/02458 (2013.01); H01L 21/02505 (2013.01); H01L 33/007 (2013.01)

Designated contracting state (EPC)

AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR

DOCDB simple family

WO 0209199 A1 20020131; AT 515790 T 20110715; AU 8296601 A 20020205; CA 2412419 A1 20020131; CA 2412419 C 20091006; EP 1320901 A1 20030625; EP 1320901 A4 20060816; EP 1320901 B1 20110706; ES 2367354 T3 20111102; US 2002175337 A1 20021128; US 6495867 B1 20021217; US 6630695 B2 20031007