EP 1330680 A1 20030730 - VACUUM ULTRAVIOLET TRANSMITTING DIRECT DEPOSIT VITRIFIED SILICON OXYFLUORIDE LITHOGRAPHY GLASS PHOTOMASK BLANKS
Title (en)
VACUUM ULTRAVIOLET TRANSMITTING DIRECT DEPOSIT VITRIFIED SILICON OXYFLUORIDE LITHOGRAPHY GLASS PHOTOMASK BLANKS
Title (de)
VITRIFIZIERTE DIREKTABLAGERUNGS-SILIZIUM-OXYFLUORIDLITHOGRAPHIEGLASFOTOMASKENROHLINGE MIT VAKUUM-ULTRAVIOLETT-DURCHLASS
Title (fr)
EBAUCHES DE PHOTOMASQUE EN VERRE POUR LITHOGRAPHIE, A BASE D'OXYFLUORURE DE SILICIUM VITRIFIE, A DEPOT DIRECT, TRANSMETTANT DES ULTRAVIOLETS EXTREMES
Publication
Application
Priority
- US 0123257 W 20010724
- US 0024776 W 20000908
- US 25813200 P 20001222
- US 27113501 P 20010224
- US 27113601 P 20010224
Abstract (en)
[origin: WO0221217A1] High purity direct deposit vitrified silicon oxyfluoride glass suitable for use as a photomask substrates for photolithography applications in the VUV wavelength region below 190 nm is disclosed. The inventive direct deposit vitrified silicon oxyfluoride glass is transmissive at wavelengths around 157 nm, making it particularly useful as a photomask substrate at the 157 nm wavelength region. The inventive photomask substrate is a dry direct deposit vitrified silicon oxyfluoride glass which exhibits very high transmittance in the vacuum ultraviolet (VUV) wavelength region while maintaining the excellent thermal and physical properties generally associated with high purity fused silica. In addition to containing fluorine and having little or no OH content, the inventive direct deposit vitrified silicon oxyfluoride glass suitable for use as a photomask substrate at 157 nm is also characterized by having less than 1x10<17> molecules/cm<3> of molecular hydrogen and low chlorine levels.
IPC 1-7
IPC 8 full level
C03B 19/14 (2006.01); C03C 3/06 (2006.01); C03C 4/00 (2006.01); G03F 1/00 (2012.01); G03F 7/20 (2006.01); H01L 21/027 (2006.01)
CPC (source: EP)
C03B 19/1407 (2013.01); C03B 19/1415 (2013.01); C03B 19/1423 (2013.01); C03B 19/1453 (2013.01); C03C 3/06 (2013.01); C03C 4/0085 (2013.01); G03F 1/60 (2013.01); G03F 7/70216 (2013.01); G03F 7/70958 (2013.01); C03B 2201/07 (2013.01); C03B 2201/075 (2013.01); C03B 2201/12 (2013.01); C03B 2201/20 (2013.01); C03B 2201/21 (2013.01); C03B 2207/06 (2013.01); C03B 2207/08 (2013.01); C03B 2207/14 (2013.01); C03B 2207/30 (2013.01); C03B 2207/32 (2013.01); C03B 2207/38 (2013.01); C03C 2201/12 (2013.01); C03C 2201/20 (2013.01); C03C 2201/21 (2013.01); C03C 2201/23 (2013.01); C03C 2201/30 (2013.01); C03C 2201/32 (2013.01); C03C 2203/54 (2013.01); Y02P 40/57 (2015.11)
Citation (search report)
See references of WO 0221217A1
Designated contracting state (EPC)
AT BE CH DE FR LI NL
DOCDB simple family (publication)
WO 0221217 A1 20020314; EP 1330680 A1 20030730; JP 2004519704 A 20040702
DOCDB simple family (application)
US 0123257 W 20010724; EP 01955932 A 20010724; JP 2002524771 A 20010724