EP 1330839 A2 20030730 - ETCHING OF HIGH ASPECT RATIO FEATURES IN A SUBSTRATE
Title (en)
ETCHING OF HIGH ASPECT RATIO FEATURES IN A SUBSTRATE
Title (de)
VERFAHREN ZUR ÄTUNG STRUKTUREN MIT HOHEM ASPEKTVERHÄLTNIS IN EINEM SUBSTRAT
Title (fr)
ATTAQUE DE CARACTERISTIQUES A RAPPORT DE FORME ELEVE DANS UN SUBSTRAT
Publication
Application
Priority
- US 0146210 W 20011101
- US 70488700 A 20001101
- US 70525400 A 20001101
Abstract (en)
[origin: WO0243116A2] A substrate processing chamber (110) comprisea a gas supply (56) to provide a gas to the chamber, first and second electrodes (115, 105) that may be electrically biased to energize the gas, the second electrode (115) being adapted to be chargeable to a power density of at least about 10 watts/cm<2>, and the second electrode (115) comprising a receiving surface (147) to receive a substrate (10), and an exhaust (110) to exhaust the gas.
IPC 1-7
IPC 8 full level
H01L 21/3065 (2006.01); H01J 37/32 (2006.01); H01L 21/311 (2006.01)
IPC 8 main group level
H01L (2006.01)
CPC (source: EP KR)
H01J 37/32082 (2013.01 - EP); H01J 37/3266 (2013.01 - EP); H01L 21/306 (2013.01 - KR); H01L 21/31116 (2013.01 - EP); H01J 2237/3347 (2013.01 - EP)
Citation (search report)
See references of WO 0243116A2
Designated contracting state (EPC)
AT BE CH CY DE DK FI FR GB IT LI NL
DOCDB simple family (publication)
WO 0243116 A2 20020530; WO 0243116 A3 20030501; CN 1471727 A 20040128; EP 1330839 A2 20030730; JP 2004529486 A 20040924; KR 20030051765 A 20030625
DOCDB simple family (application)
US 0146210 W 20011101; CN 01817958 A 20011101; EP 01987258 A 20011101; JP 2002544762 A 20011101; KR 20037006046 A 20030430