EP 1340263 A2 20030903 - TRENCH-GATE FIELD-EFFECT TRANSISTORS AND THEIR MANUFACTURE
Title (en)
TRENCH-GATE FIELD-EFFECT TRANSISTORS AND THEIR MANUFACTURE
Title (de)
GRABEN-GATE-FELDEFFEKTTRANSISTOREN UND IHRE HERSTELLUNG
Title (fr)
TRANSISTORS A EFFET DE CHAMP COMPORTANT UNE TRANCHEE ET UNE GRILLE ET LEUR FABRICATION
Publication
Application
Priority
- EP 0113420 W 20011116
- GB 0028031 A 20001117
Abstract (en)
[origin: WO0241404A2] Trench-gate field-effect transistors, for example power MOSFETs, are disclosed having trenched electrode configurations (11,23) that permit fast switching of the transistor, while also providing over-voltage protection for the gate dielectric (21) and facilitating manufacture. The gate electrode (11) comprising a semiconductor material of one conductivity type (n) is present in an upper part of a deeper insulated trench (20,21) that extends into a drain region (14,14a) of the transistor. A lower electrode (23) connected to a source (13,33) of the transistor is present in the lower part of the trench. This lower electrode (23) comprises a semiconductor material of opposite conductivity type (p) that adjoins the semiconductor material of the gate electrode (11) to form a p-n junction (31) between the gate electrode (11) and the lower electrode (23). The p-n junction (31) provides a protection diode (D) between the gate electrode (11) and the source (13,33). The gate electrode (11) is shielded from most of the drain region by the lower electrode (23), so reducing the gate-drain capacitance and improving the switching speed of the transistor.
IPC 1-7
H01L 29/78; H01L 29/417; H01L 29/739; H01L 21/336; H01L 21/331
IPC 8 full level
H01L 29/41 (2006.01); H01L 29/78 (2006.01); H01L 21/331 (2006.01); H01L 21/336 (2006.01); H01L 27/04 (2006.01); H01L 27/06 (2006.01); H01L 29/06 (2006.01); H01L 29/40 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/49 (2006.01); H01L 29/739 (2006.01)
CPC (source: EP KR US)
H01L 29/402 (2013.01 - EP US); H01L 29/407 (2013.01 - EP KR US); H01L 29/41741 (2013.01 - KR); H01L 29/4925 (2013.01 - KR); H01L 29/7397 (2013.01 - EP US); H01L 29/7804 (2013.01 - KR); H01L 29/7808 (2013.01 - EP); H01L 29/7813 (2013.01 - EP KR US); H01L 29/41741 (2013.01 - EP US); H01L 29/4916 (2013.01 - EP US)
Citation (search report)
See references of WO 0241404A2
Designated contracting state (EPC)
AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR
DOCDB simple family (publication)
WO 0241404 A2 20020523; WO 0241404 A3 20021010; AT E356439 T1 20070315; DE 60127166 D1 20070419; DE 60127166 T2 20080110; EP 1340263 A2 20030903; EP 1340263 B1 20070307; GB 0028031 D0 20010103; JP 2004514293 A 20040513; JP 4087248 B2 20080521; KR 100816253 B1 20080321; KR 20020082482 A 20021031; US 6566708 B1 20030520
DOCDB simple family (application)
EP 0113420 W 20011116; AT 01996888 T 20011116; DE 60127166 T 20011116; EP 01996888 A 20011116; GB 0028031 A 20001117; JP 2002543705 A 20011116; KR 20027009205 A 20020716; US 99320101 A 20011116