EP 1342301 B1 20070214 - SEMICONDUCTOR LASER WITH LATERAL CURRENT CONDUCTION AND METHOD FOR PRODUCING THE SAME
Title (en)
SEMICONDUCTOR LASER WITH LATERAL CURRENT CONDUCTION AND METHOD FOR PRODUCING THE SAME
Title (de)
HALBLEITERLASER MIT LATERALER STROMFÜHRUNG UND VERFAHREN ZU DESSEN HERSTELLUNG
Title (fr)
LASER A SEMI-CONDUCTEURS A CONDUCTION DE COURANT LATERALE ET SON PROCEDE DE PRODUCTION
Publication
Application
Priority
- DE 0104687 W 20011212
- DE 10061701 A 20001212
Abstract (en)
[origin: WO0249168A2] The invention relates to a semiconductor laser with a semiconductor body (1) that comprises a first and a second main surface, preferably provided with one contact surface (2,3) each, and a first and a second mirror surface (6,7). An active layer (4) and a current-carrying layer (5) are interposed between the main surfaces. The current carrying layer (5) has at least one strip-shaped resistance zone (8) that runs at an angle to the resonator axis (18) and whose specific surface resistance is higher in at least some zones than in the zones of the current carrying layer (5) adjoining the resistance zone (8).
IPC 8 full level
H01S 5/16 (2006.01); H01S 5/042 (2006.01); H01S 5/227 (2006.01)
CPC (source: EP US)
H01S 5/16 (2013.01 - EP US); H01S 5/0421 (2013.01 - EP US); H01S 5/168 (2013.01 - EP US); H01S 5/2275 (2013.01 - EP US)
Designated contracting state (EPC)
DE FR
DOCDB simple family (publication)
WO 0249168 A2 20020620; WO 0249168 A3 20030116; DE 10061701 A1 20020627; DE 50112049 D1 20070329; EP 1342301 A2 20030910; EP 1342301 B1 20070214; US 2004028102 A1 20040212; US 6944199 B2 20050913
DOCDB simple family (application)
DE 0104687 W 20011212; DE 10061701 A 20001212; DE 50112049 T 20011212; EP 01990290 A 20011212; US 46082303 A 20030612