EP 1346086 A2 20030924 - PROCESS FOR CONTROLLING THERMAL HISTORY OF VACANCY-DOMINATED, SINGLE CRYSTAL SILICON
Title (en)
PROCESS FOR CONTROLLING THERMAL HISTORY OF VACANCY-DOMINATED, SINGLE CRYSTAL SILICON
Title (de)
VERFAHREN ZUR STEUERUNG DER THERMISCHEN GESCHICHTE VON LEERSTELLENDOMINIERTEM EINKRISTALLINEM SILICIUM
Title (fr)
PROCEDE DE COMMANDE DE L'HISTORIQUE DES TEMPERATURES DE SILICIUM MONOCRISTALLIN A LACUNES PREDOMINANTES
Publication
Application
Priority
- JP 2000364601 A 20001130
- JP 2000374147 A 20001208
- US 0144180 W 20011126
- US 27398001 P 20010307
Abstract (en)
[origin: WO0244446A2] A Czochralski method of producing a single crystal silicon ingot having a uniform thermal history. In the process, the power supplied to the side heater is decreased during the growth of a latter portion of main body, and optionally the end-cone, of the ingot, while power supplied to a bottom heater is gradually increased during growth the same portion. The present process enables a substantial portion of an ingot to be obtained yielding wafers having fewer light point defects in excess of about 0.2 microns and improved gate oxide integrity.
IPC 1-7
IPC 8 full level
C30B 15/00 (2006.01); C30B 15/14 (2006.01)
CPC (source: EP KR)
C30B 15/14 (2013.01 - EP); C30B 15/203 (2013.01 - EP); C30B 15/206 (2013.01 - EP); C30B 29/06 (2013.01 - EP KR)
Citation (search report)
See references of WO 0244446A2
Designated contracting state (EPC)
AT BE CH CY DE FR GB IT LI
DOCDB simple family (publication)
WO 0244446 A2 20020606; WO 0244446 A3 20030116; CN 1478156 A 20040225; EP 1346086 A2 20030924; KR 20030059293 A 20030707; TW 583353 B 20040411
DOCDB simple family (application)
US 0144180 W 20011126; CN 01819895 A 20011126; EP 01989767 A 20011126; KR 20037007250 A 20030529; TW 90129536 A 20011129