EP 1346403 A2 20030924 - METHOD FOR PRODUCING A MICROELECTRONIC COMPONENT AND COMPONENT PRODUCED ACCORDING TO SAID METHOD
Title (en)
METHOD FOR PRODUCING A MICROELECTRONIC COMPONENT AND COMPONENT PRODUCED ACCORDING TO SAID METHOD
Title (de)
VERFAHREN ZUR HERSTELLUNG EINES MIKROELEKTRONISCHEN BAUELEMENTS UND DANACH HERGESTELLTES BAUELEMENT
Title (fr)
PROCEDE DE PRODUCTION D'UN COMPOSANT MICROELECTRONIQUE ET COMPOSANT PRODUIT SELON CE PROCEDE
Publication
Application
Priority
- DE 10064479 A 20001222
- EP 0114955 W 20011218
Abstract (en)
[origin: WO02052626A2] The invention relates to methods for producing a semiconductor element in a GaAs compound semiconductor material, especially a heterostructure GaAs semiconductor material, for example a hetero-bipolar transistor. The invention allows production of a low-impedance contact resistance with high long-term stability of the component properties in a simple and cost-effective process profile.
IPC 1-7
IPC 8 full level
H01L 21/285 (2006.01); H01L 29/45 (2006.01)
CPC (source: EP)
H01L 21/28575 (2013.01); H01L 24/11 (2013.01); H01L 29/452 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/13 (2013.01); H01L 2224/05001 (2013.01); H01L 2224/05027 (2013.01); H01L 2224/0508 (2013.01); H01L 2224/05572 (2013.01); H01L 2924/12032 (2013.01); H01L 2924/1305 (2013.01); H01L 2924/14 (2013.01)
Citation (search report)
See references of WO 02052626A2
Citation (examination)
US 5411632 A 19950502 - DELAGE SYLVAIN [FR], et al
Designated contracting state (EPC)
AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR
DOCDB simple family (publication)
WO 02052626 A2 20020704; WO 02052626 A3 20030213; CN 1222984 C 20051012; CN 1481579 A 20040310; DE 10064479 A1 20020704; EP 1346403 A2 20030924; TW 550715 B 20030901
DOCDB simple family (application)
EP 0114955 W 20011218; CN 01820891 A 20011218; DE 10064479 A 20001222; EP 01988040 A 20011218; TW 90131716 A 20011220