EP 1347804 A4 20090422 - ION IMPLANTATION SYSTEM AND CONTROL METHOD
Title (en)
ION IMPLANTATION SYSTEM AND CONTROL METHOD
Title (de)
IONENIMPLANTATIONSSYSTEM UND KONTROLLVERFAHREN
Title (fr)
SYSTEME D'IMPLANTATION IONIQUE ET PROCEDE DE CONTROLE
Publication
Application
Priority
- US 0118822 W 20010612
- US 25008000 P 20001130
- US 73609700 A 20001213
- US 0033786 W 20001213
- US 25732200 P 20001219
- US 26726001 P 20010207
Abstract (en)
[origin: WO0243803A1] Ion implantation with high brightness, ion beam by ionizing gas or vapor, e.g. of dimers, or decaborane, by direct electron impact ionization adjacent the outlet aperture (46, 176) of the ionization chamber (80; 175)). Preferably: conditions are maintained that produce a substantial ion density and limit the transverse kinetic energy of the ions to less than 0.7 eV; width of the ionization volume adjacent the aperture is limited to width less than about three times the width of the aperture; the aperture is extremely elongated; magnetic fields are avoided or limited; low ion beam noise is maintained; conditions within the ionization chamber are maintained that prevent formation of an arc discharge. With ion beam optics, such as the batch implanter of Figure (20), or in serial implanters, ions from the ion source are transported to a target surface and implanted; advantageously, in some cases, in conjunction with acceleration-deceleration beam lines employing cluster ion beams. Also disclosed are electron gun constructions, ribbon sources for electrons and ionization chamber configurations. Forming features of semiconductor devices, e.g. drain extensions of CMOS devices, and doping of flat panels are shown.
IPC 8 full level
H01J 27/20 (2006.01); H01J 37/08 (2006.01); H01J 37/317 (2006.01); H01J 49/14 (2006.01); H01L 21/265 (2006.01)
CPC (source: EP)
H01J 27/205 (2013.01); H01J 37/08 (2013.01); H01J 37/3171 (2013.01); H01J 2237/0473 (2013.01); H01J 2237/0475 (2013.01); H01J 2237/0812 (2013.01); H01J 2237/082 (2013.01)
Citation (search report)
- [Y] US 4841197 A 19890620 - TAKAYAMA KAZUO [JP], et al
- [Y] WO 9717717 A1 19970515 - APPLIED MATERIALS INC [US], et al
- [Y] US 5101110 A 19920331 - MATSUDO MASAHIKO [JP], et al
- [A] EP 0329461 A2 19890823 - VG INSTR GROUP [GB]
- [A] US 4933551 A 19900612 - BERNIUS MARK T [US], et al
- [A] WO 9015658 A1 19901227 - VIKING INSTR CORP [US]
- [A] US 3557365 A 19710119 - MAYO RALPH ELLIOTT, et al
- See references of WO 0243803A1
Designated contracting state (EPC)
AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR
DOCDB simple family (publication)
WO 0243803 A1 20020606; AU 6684701 A 20020611; CN 100385605 C 20080430; CN 1477984 A 20040225; EP 1347804 A1 20031001; EP 1347804 A4 20090422; EP 2426692 A2 20120307; EP 2426692 A3 20130821; JP 2004519070 A 20040624
DOCDB simple family (application)
US 0118822 W 20010612; AU 6684701 A 20010612; CN 01819851 A 20010612; EP 01944435 A 20010612; EP 11008982 A 20010612; JP 2002545772 A 20010612