EP 1349173 A3 20040818 - Semiconductor memory device and drive method therefor
Title (en)
Semiconductor memory device and drive method therefor
Title (de)
Halbleiterspeicheranordnung und Betriebsverfahren dafür
Title (fr)
Dispositif de mémoire à semiconducteurs et sa méthode de commande
Publication
Application
Priority
JP 2002085631 A 20020326
Abstract (en)
[origin: EP1349173A2] The semiconductor memory device of the invention includes at least three memory cell blocks arranged in a word line direction. Each of the memory cell blocks includes a plurality of memory cells arranged in a bit line direction. Each of the memory cells includes a ferroelectric capacitor for storing data by displacement of polarization of a ferroelectric film and a selection transistor connected to one of paired electrodes of the ferroelectric capacitor. Each of the memory cell blocks also includes: a bit line, a sub-bit line and a source line extending in the bit line direction; and a read transistor having a gate connected to one end of the sub-bit line, a source connected to the source line, and a drain connected to one end of the bit line. The read transistor reads data by detecting the displacement of the polarization of the ferroelectric film of the ferroelectric capacitor of a data read memory cell from which data is read among the plurality of memory cells. The sub-bit lines of any two of the memory cell blocks are connected to each other via a sub-bit line coupling switch. <IMAGE>
IPC 1-7
IPC 8 full level
G11C 11/22 (2006.01)
CPC (source: EP KR US)
G11C 11/22 (2013.01 - EP KR US)
Citation (search report)
- [X] US 6151242 A 20001121 - TAKASHIMA DAISABURO [JP]
- [A] US 5946254 A 19990831 - TSUCHIDA KENJI [JP]
- [A] US 5682343 A 19971028 - TOMISHIMA SHIGEKI [JP], et al
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PT SE SI SK TR
DOCDB simple family (publication)
EP 1349173 A2 20031001; EP 1349173 A3 20040818; EP 1349173 B1 20060607; CN 1447433 A 20031008; DE 60305770 D1 20060720; DE 60305770 T2 20061012; JP 2003281883 A 20031003; KR 20030077459 A 20031001; US 2003185042 A1 20031002; US 6707704 B2 20040316
DOCDB simple family (application)
EP 03006506 A 20030321; CN 03107287 A 20030321; DE 60305770 T 20030321; JP 2002085631 A 20020326; KR 20030018680 A 20030326; US 39284303 A 20030321